2010
DOI: 10.1103/physrevb.82.235207
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Spectral and temperature dependence of two-photon and free-carrier absorption in InSb

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Cited by 25 publications
(15 citation statements)
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“…In fact, exciton enhancement should be considered in the theoretical calculation of TPA coefficients. For the 3.0 nm dots in the resonant regime, the discrepancy may be due to the exciton enhancement near the band gap, similar to the analysis of ZnTe, InSb . The density of exciton states will become larger when the photon energy of the excitation laser beam gets closer to the band gap of the CQD.…”
Section: Resultsmentioning
confidence: 69%
“…In fact, exciton enhancement should be considered in the theoretical calculation of TPA coefficients. For the 3.0 nm dots in the resonant regime, the discrepancy may be due to the exciton enhancement near the band gap, similar to the analysis of ZnTe, InSb . The density of exciton states will become larger when the photon energy of the excitation laser beam gets closer to the band gap of the CQD.…”
Section: Resultsmentioning
confidence: 69%
“…The TPA coefficient β is set to be 0.3 cm MW in order to obtain the closest agreement with the experimental results. This value is somewhat smaller than the 2 cm MW −1 typically reported by studies that use picosecond and femtosecond pulses with peak intensities of several MW cm −2 [36,37]. The discrepancy between the two coefficients may indicate a saturation of the TPA process by Pauli blocking, as our experiment was performed using GW cm −2 peak intensities.…”
Section: Theory Of Perturbative Fwmmentioning
confidence: 54%
“…This observation indicates that the main contribution to the pump-probe response in InSb originates from a long-living electron-hole plasma produced by the intense THz field of the pump pulse. Possible mechanisms of free carrier generation by an excitation below the bandgap of InSb such as impact ionization [15], two-photon absorption (TPA) [36] or interband tunneling [37] have been studied previously. Here we concentrate on the FWM signal, which characterizes coherence induced in the sample by the phase-stable THz pulses.…”
Section: Field-sensitive Two-dimensional Spectroscopymentioning
confidence: 99%
“…This means that 2PA coefficients in narrow-gap semiconductors are two to three orders of magnitude larger than in large-gap semiconductors. For example, ZnSe (E g = 2.67 eV) has a 2PA coefficient, Į 2 § 4.4 cm/GW at 532 nm [5], while for InSb (Eg = 0.23 eV), , Į 2 § 2 cm/MW in the range 8 to 12 ȝP [6]. Our experimental studies show that extremely nondegenerate (END) 2PA coefficients can exceed their degenerate counterparts by two to three orders of magnitude, thus allowing the large coefficients reserved for small bandgap materials to be realized in wide gap semiconductors.…”
Section: Introductionmentioning
confidence: 99%