Spectral behavior and nonlinear optical properties of aluminophosphate semiconductor-doped glasses

Charge Coupled Devices as Particle Detectors

“…The specialty literature involves also a rather large number of nanoimpurities and nanodefect types that can affect the quality of the silicon crystalline lattice. The study of these nanoimpurities and defects began even before (see, e.g., [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24]) the invention (in 1969) of the charge coupled devices, "culminated" with the elaboration of the main experimental methods used to identify and characterize them [25][26][27][28][29][30][31][32][33][34][35][36][37][38], and continues nowadays (see, e.g., [39][40][41]). The CCDs image sensors are extremely sensitive to contamination by heavy metals, which form Shockley-Reed-Hall deep-level traps that generate dark current in the imager region of the silicon device [28,32].…”

“…This dark current from defects scattered among the imager pixels represents a source of pattern noise and may cause the pixels and even the imager to be defective. The deep-level transient spectroscopy (DLTS [25][26][27]) and the dark current spectroscopy (DCS, [28][29][30][31][32][33][34][35][36][37][38]) methods allow the study of these deep-level traps in silicon at concentrations even of only 10 7 nanotraps/cm 3 .…”