Spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser under various operating conditions

Yukinari, Masashi; Sato, Noriaki; Nishiyama, N.; Arai, Shigehisa

doi:10.1587/elex.11.20140679

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“…Thanks to this unique configuration, the TL is capable of both current and voltage modulation. The combination of these two modulation methods can lead to multiple functions such as output control with low wavelength shift 9) and signal mixing. 10) Based on theoretical calculations, it is expected that a highspeed modulation exceeding the limit of conventional DMLs is possible for both cases.…”

Section: Introductionmentioning

confidence: 99%

Continuous-wave operation of a 1.3 μm wavelength npn AlGaInAs/InP transistor laser up to 90 °C

Yoshitomi

Yamanaka

Goto

et al. 2020

Jpn. J. Appl. Phys.

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A transistor laser (TL) is a device that operates at a high-speed with multiple functions such as output control with low wavelength shift and signal mixing. By adopting a high heat dissipation structure with a high-speed compatible wide electrode pad and thick Au plating in TLs, improvement of temperature performance in 1.3 μm wavelength npn AlGaInAs/InP TL was demonstrated. As a result, continuous-wave operation of a 1.3 μm TL up to 90 °C was achieved. The thermal resistance was estimated to be 25 K W−1, based on the spectrum behavior, which is at least four times lower than the previously observed value.

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Section: Introductionmentioning

confidence: 99%