Spectral competition of chirped dual-wavelength emission in monolithic InGaN multiple-quantum well light-emitting diodes

Wang, Tsun-Hsin; Kuo, Yen−Kuang

doi:10.1063/1.4803942

Cited by 12 publications

(6 citation statements)

References 25 publications

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“…13) Results of theoretical simulations also support this trend. 28) Interestingly, the behavior of a sample with large V-defects is different. QWs near n-GaN appear to be more efficient than QWs near p-GaN at a low current.…”

Section: Resultsmentioning

confidence: 99%

Carrier injection modulated by V-defects in InGaN/GaN multiple-quantum-well blue LEDs

Yun

Su³

et al. 2014

Jpn. J. Appl. Phys.

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We investigated the carrier injection mechanism in InGaN/GaN blue light-emitting diodes by growing monolithic dual-wavelength multiple quantum wells and measuring electroluminescence spectra at different current densities at room temperature. During the epitaxial growth, V-defects of different sizes were intentionally formed in the active region area by controlling the growth conditions. We found that the size of the V-defects has a significant effect on the spectral competition of dual-wavelength emissions. With small V-defects, light emitted from quantum wells near p-GaN is dominant. In a sample with large V-defects, quantum wells near n-GaN contribute more to carrier recombination. The hole injection depth of eight pairs of quantum wells far from p-GaN is quantitatively estimated. We attribute the different behaviors to the modulation of carrier injection depth by the formed V-defects.

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Section: Resultsmentioning

confidence: 99%

Carrier injection modulated by V-defects in InGaN/GaN multiple-quantum-well blue LEDs

Yun

Su³

et al. 2014

Jpn. J. Appl. Phys.

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“…Similar structures with multicolor emission layers in a single p-n junction have been reported; however, they emit light at multiple peaks and also change color as the ratio of peak intensities changes with the current. [19][20][21] By contrast, the structure developed in this study emits light at a single peak over a wide range of 5-100 mA (5-100 A cm −2 ). This is attributed to the design of the intermediate layer, as shown in Fig.…”

mentioning

confidence: 79%

InGaN monolithic full-color light-emitting diode developed by selective removal of active layers in a single p–n junction

Goshonoo,

Okuno,

Ohya

2023

Appl. Phys. Express

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We demonstrate a monolithic InGaN light-emitting diode (LED) that emits red, green, and blue (RGB) light. The proposed LED has a simple structure with stacking RGB light-emitting layers on n-GaN, wherein unnecessary layers were removed based on the desired emission color and a stacking p-GaN layer. The electroluminescence characteristics of the LED indicated that the peak wavelengths at 20 mA are R: 632.9 nm, G: 519.0 nm, and B: 449.5 nm, and the external quantum efficiencies are R: 0.28%, G: 8.3%, and B: 0.84%. This structure can be manufactured using only semiconductor processes, thus rendering smaller and higher-resolution microdisplays possible.

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“…However, because of the strong quantum confinement Stark effect and the solid phase immiscibility in the In x Ga 1−x N/GaN material system, which is a significant problem for typical In x Ga 1−x N epitaxial growth, the internal quantum efficiency of In x Ga 1−x N/GaN QWs is quite low for the green and red wavelengths. [38] In-phase separation and composition fluctuation were known to be related to the biaxial strain in InGaN layer grown on GaN and also to the miscibility gap between InN and GaN, which can shift notably into a higher In-content regime of the temperature-composition diagram. [39] Unintentional In-phase separations result in increased numbers of defects followed by dramatic degradation of the emission efficiency.…”

Section: Monolithic Gan-based White Ledsmentioning

confidence: 99%

Phosphor-free white light-emitting diodes

Guo

Liu

et al. 2015

Chinese Phys. B

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The multiple color-matching schemes that could improve the color rendering index for phosphor-free white LEDs are discussed. Then we review a few of the recent research directions for phosphor-free white LEDs, which include the development of monolithic GaN-based white LEDs and hybrid integrated GaN-based and AlGaInP-based white LEDs. These development paths will pave the way toward commercial application of phosphor-free white LEDs in the coming years.

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Spectral competition of chirped dual-wavelength emission in monolithic InGaN multiple-quantum well light-emitting diodes

Cited by 12 publications

References 25 publications

Carrier injection modulated by V-defects in InGaN/GaN multiple-quantum-well blue LEDs

Carrier injection modulated by V-defects in InGaN/GaN multiple-quantum-well blue LEDs

InGaN monolithic full-color light-emitting diode developed by selective removal of active layers in a single p–n junction

Phosphor-free white light-emitting diodes

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