Spectral ellipsometry investigation ofZn0.53Cd0.47Selattice matched to InP

Temperature-dependent photoluminescence and contactless electroreflectance characterization of a ZnxCd1−xSe/Znx′Cdy′Mg1−x′−y′Se asymmetric coupled quantum well structure

“…At room temperature, the signal at 2.090 ± 0.005 eV was assigned to the band gap E 0 of the Zn 0.48 Cd 0.52 Se (cap). The value of spin-orbit splitting, 0 = 0.44 eV, was adopted from the similar Zn content of ZnCdSe ternary compound [16]. Using our value of band gap E 0 and this value of 0 , we obtained E 0 + 0 = 2.530 ± 0.005 eV for Zn 0.48 Cd 0.52 Se, which shows good agreement with the experimental value of Table 1.…”

Exciton localization in MgxZnyCd1−x−ySe alloy

“…This increase is in a good agreement with the increase in the Stokes shift between the PL peak energy and the bandgap measured through reflectivity measurements. It should be noted that E A reported for Zn 0.5 Cd 0.5 Se is close to the exciton binding energy previously reported for Zn 0.53 Cd 0.47 Se (20 meV) [9]. Therefore, the decrease in the PL intensity is due to the thermal activation of localized excitons to free carriers and their further nonradiative recombination.…”

Thermal and Optical Properties of Zn1−x Mn x Te Diluted Magnetic Semiconductor Studied by Photoacoustic Spectroscopic Method

“…A great deal of work has been devoted to the investigation of optical properties of II-VI compounds and their ternary alloys [12,13]. The energy bandgap of these semiconductors has a value between 1 eV and 3 eV [14][15][16] which makes them useful for applications in optoelectronic devices in the visible region of the spectrum.…”