Spectral features of the photoresponse of structures with silicon nanoparticles

Ken, O. S.; Andronikov, D. A.; Yavsin, D. A.; Kukin, A. V.; Danilov, Sergey; Смирнов, А. Н.; Sreseli, O. M.; Gurevich, S. A.

doi:10.1134/s106378261411013x

Cited by 12 publications

(10 citation statements)

References 11 publications

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“…Their conductivity changes by no more than 10–20% after several months of storage under open‐air conditions and the IR transmission spectra show insignificant absorption by Si–O–Si bond vibrations . Owing to the quantum confinement effect, the 2 nm Si NPs has larger optical gap (∼2.1 eV) than bulk silicon (1.12 eV), which is proved by optical absorption and photoluminescence spectroscopy .…”

Section: Characteristics Of the Composite Si–au Layers Grown On The Pmentioning

confidence: 88%

Dual mechanism of photoresponse in composite Si–Au nanolayers on crystalline silicon

Ken

Yavsin

Dementev

et al. 2016

Physica Status Solidi (a)

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Phone: þ7 812 292 79 96, Fax: þ7 812 297 10 17Silicon-based structures comprised of crystalline silicon substrates and active layers of mixed silicon and gold nanoparticles were fabricated and characterized. Several layer compositions were studied. The investigated structures demonstrate very large spectral sensitivity (more than 10 A W À1 ) in the wide spectral range (400-1000 nm). Such large sensitivity implies presence of photocurrent amplification. A model which involves dual mechanism of the photoresponse was proposed in order to explain the appearance of the photocurrent amplification in the investigated structures.Spectral sensitivity of the structure with composite layer of Si and Au nanoparticles on Si substrate (Au volume fraction is $50%) at reverse bias voltage of À0.4 V.

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Section: Characteristics Of the Composite Si–au Layers Grown On The Pmentioning

confidence: 88%

Dual mechanism of photoresponse in composite Si–Au nanolayers on crystalline silicon

Ken

Yavsin

Dementev

et al. 2016

Physica Status Solidi (a)

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“…In this regard, to create new types of cheap solar cells, technologies of thin-film (0.5 -1.0 microns) solar cells based on amorphous hydrogenated silicon (a-Si:H) with a p-i-n structure have been developed since the 1970's. They are obtained by a relatively cheap method of decomposition of SiH 4 monosilane in a glow discharge plasma without the use of expensive silicon substrates or harmful and toxic substances, with a thickness of 300 microns, and they have higher electronic properties and 20 times greater optical absorption compared to single-crystal silicon [109][110][111][112][113][114][115]. The proposed p-i-n structure makes it possible to create a uniform internal electric field in the entire region of optical light absorption (i-region), which is necessary to provide the film with (a-Si:H) the drift of hole charge carriers with a very small diffusion length (∼ 100 nm), in contrast to crystalline solar cells based on p-n junctions, where charge carriers with a larger diffusion length (100 -200 microns) reach the electrodes in the absence of an electric field.…”

Section: Stability Of Processes In Non-equilibrium Systemsmentioning

confidence: 99%

Personalized energy systems based on nanostructured materials

Коваленко¹,

Тугова²,

Попков³

et al. 2021

Nanosystems: Phys. Chem. Math.

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In this paper, the achievements, problems and prospects of creating personalized energy systems based on nanostructured materials are analysed. Various concepts of developing methods and ways of personalized energy provision for autonomous human survival in remote natural habitat, emergency situations of natural disasters and technogenic catastrophes when centralized power supply is unavailable or in an effort to reduce the economic and environmental costs of remote energy production and transportation are also considered. The possibilities and limitations of using traditional and renewable alternative energy sources, processes and devices for extracting, storing and converting their energy into the necessary consumer forms due to fundamental physical laws are discussed as well. The article covers the new nanostructured materials with special functional properties for personalized energy systems development. The mechanisms for formation of the required nanostructures in synthesized materials, especially those with a high content of fractal interfacial formations, are considered as well as methods for studying their structural and phase characteristics that determine the achievability of the specified parameters of model converters and energy storage devices.

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“…the conductivity of crystalline Si and a carrier concentration on the order of 10 12 cm −3 , which is an advantage as regards their application in optoelectronics. It was also shown in [5,6] that the conductivity of the layers is nearly independent of the type and level of doping of the starting silicon target from which Si nanoparticles are produced. In [7], granular metallic films (Cu and Ni) deposited by the method of LED were examined.…”

Section: Introductionmentioning

confidence: 99%

“…An analysis of the Raman spectrum obtained for a film of Si nanoparticles deposited on a single-crystal silicon substrate showed that [6], in addition to a narrow substrate line, the Raman spectrum has a broad and weakly structured band associated with the scattering in a layer of deposited Si particles. The violation of the translation symmetry of the crystal lattice in objects of this kind fully lifts the restriction imposed by the quasi-momentum conservation law (q = 0).…”

Section: Introductionmentioning

confidence: 99%

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Capacitance spectroscopy of structures with Si nanoparticles deposited onto crystalline silicon p-Si

Sobolev

Ken

Sreseli

et al. 2019

Semicond. Sci. Technol.

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Capacitance spectroscopy has been used to study close-packed amorphous silicon nanoparticle layers (100 nm) deposited on p-type crystalline silicon by the laser electrodispersion method. It was found that this structure is an Au-nano-Si-p-Si p-n heterojunction that exhibit rectifying properties. In addition, a plateau was observed in its capacitance-voltage (C−V ) characteristics, which indicates that the structure has a layer with spatially localized carriers. The thickness of this layer coincides with that of the deposited layer of amorphous nanoparticles. It was found by using deep level transient spectroscopy (DLTS) to examine the carrier emission from deep traps that position and amplitudes of the DLTS peaks E1 and E3, associated with localized states, synchronously vary both with the pulse voltages U b and filling pulse voltages U f when illuminated with white light. These dependences a due, respectively, (1) to an increase in the population of localized states upon a change in the position of the Fermi level because of the recharging of deep defects, (2) to the Coulomb interaction of carriers localized in the deep E3 and E1 states of the nano-Si layer and in the ionized surface states of Si nanoparticles, and (3) to the Stark effect. All the above specific features of the object under study are properties of quantum-dots (QDs) in which E3 and E1 are the ground and excited states of these QDs, respectively. Finally, it was observed that levels associated with the s-and p-states have too small capture cross sections that are not characteristic of QDs. It was suggested that the significant decrease in these values may be due to the hopping conduction mechanism.

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Spectral features of the photoresponse of structures with silicon nanoparticles

Cited by 12 publications

References 11 publications

Dual mechanism of photoresponse in composite Si–Au nanolayers on crystalline silicon

Dual mechanism of photoresponse in composite Si–Au nanolayers on crystalline silicon

Personalized energy systems based on nanostructured materials

Capacitance spectroscopy of structures with Si nanoparticles deposited onto crystalline silicon p-Si

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