SPECTRAL STUDY ON RESPONSE OF HgCdTe IR TWO-COLOR DETECTOR ARRAYS

Yu, Zhenhua; Zhou, Wenhong; Hu, Weida; Hu, Xiaoning; Ding, Ran; Li, He

doi:10.3724/sp.j.1010.2009.00004

Cited by 5 publications

(4 citation statements)

References 4 publications

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“…Integrated HgCdTe two-color n-p-P-P-N photodetector arrays have recently been fabricated in our group [15,16]. At 78 K, the measured SWIR and MWIR photodiode cut-off wavelengths are consistent with the expected configuration of the device.…”

Section: Introductionmentioning

confidence: 60%

An improvement on short-wavelength photoresponse for a heterostructure HgCdTe two-color infrared detector

Chen

et al. 2010

Semicond. Sci. Technol.

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Integrated HgCdTe two-color infrared detector arrays were fabricated and their spectral photoresponses measured. The top mid-wavelength infrared planar photodiode was processed by selective B + implantation and the bottom short-wavelength infrared P-N homojunction photodiode formed in situ during MBE growth by indium impurity doping. A preliminary 256 × 1 linear focal plane array of SWIR/MWIR HgCdTe was fabricated by mesa isolation, passivation and metallization. Detailed investigations on the inner mechanism of the short-wavelength narrow effect commonly associated with integrated HgCdTe two-color detectors have been carried out by combining experimental work with analytical analysis and numerical simulation. It is shown in this work that the short-wavelength narrow effect can be successfully alleviated by replacing the homostructure short-wavelength P-N junction with a heterostructure short-wavelength P-N junction which significantly improves the performance of the detector.

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Section: Introductionmentioning

confidence: 60%

An improvement on short-wavelength photoresponse for a heterostructure HgCdTe two-color infrared detector

Chen

et al. 2010

Semicond. Sci. Technol.

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“…Those states can result in a significant amount of bulk traps at the HgCdTe absorption layer, especially close to the GaAs-substrate/Hg 1-x Cd x Te hetero-interface, giving rise to much stronger photovoltaic effects than those observed in homojunction-based device [5][6][7][8][9][10]. Those notable trap densities can make the surface potential accumulated, depleted or even inversed, inducing significant reductions of photoresponse.…”

Section: Introductionmentioning

confidence: 99%

Effects of hetero-related bulk-traps on photoresponse for long-wavelength HgCdTe infrared photodiode

Chen

Yin

et al. 2009

2009 34th International Conference on Infrared, Millimeter, and Terahertz Waves

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Effects of hetero-related bulk traps on photoresponse for long-wavelength Hg 1 x Cd x Te infrared photodiodes have been numerically studied. The model involves a generalized approach, taking into account absorption coefficient, trap-assisted and band-to-band tunneling recombination mechanism, and bulk traps distributions associated with misfit dislocations present in the GaAs-substrate/Hg 1 x Cd x Te hetero-structure. The characteristic x-dependent material parameters, used in the simulations, such as donor concentration, trap density and level, and minority lifetime, are extracted by the simultaneous-mode nonlinear fitting procedure.

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“…The dark-current performance for the LW detector is approaching that of singlecolor, liquid-phase epitaxy (LPE) LW IR detectors. 256 × 1 and 128 × 128 FPAs of HgCdTe SW/MW IR detectors with an n − p − P − P − N heterojunction architecture on GaAs substrate have been fabricated and optimized in our group [20,21]. To further improve the performance of IR detector arrays, numerical simulations have also been carried out by several groups.…”

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confidence: 99%

128 × 128 long-wavelength/mid-wavelength two-color HgCdTe infrared focal plane array detector with ultralow spectral cross talk

Liao

et al. 2014

Opt. Lett.

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High temporal and spatial coherent simultaneous long-wavelength/mid-wavelength (LW/MW) two-color focal plane array (FPA) infrared detection is the cutting-edge technique for third-generation infrared remote sensing. In this Letter, HgCdTe LW/MW two-color infrared detectors were designed and fabricated. The top long-wavelength and bottom mid-wavelength infrared planar photodiodes were processed by selective B(+)-implantation after etching the long-wavelength epilayer into a curvature and exposing the mid-wavelength layers for the implantation of the n region of the MW photodiode by a micro-mesa array technique. A 128×128 MW/LW HgCdTe infrared FPA detector is fabricated photo-lithographically by simultaneous nonplanar B(+)-implantation of the LW and MW photodiodes, passivation and metallization of the sidewalls, mesa isolation, and flip-chip hybridization with a read-out integrated circuit. The inner mechanisms for suppressing the cross talk and improving photoresponse have been carried out by combining experimental work with numerical simulations.

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SPECTRAL STUDY ON RESPONSE OF HgCdTe IR TWO-COLOR DETECTOR ARRAYS

Cited by 5 publications

References 4 publications

An improvement on short-wavelength photoresponse for a heterostructure HgCdTe two-color infrared detector

An improvement on short-wavelength photoresponse for a heterostructure HgCdTe two-color infrared detector

Effects of hetero-related bulk-traps on photoresponse for long-wavelength HgCdTe infrared photodiode

128 × 128 long-wavelength/mid-wavelength two-color HgCdTe infrared focal plane array detector with ultralow spectral cross talk

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