Spectrally Resolved Photodynamics of Individual Emitters in Large-Area Monolayers of Hexagonal Boron Nitride

Stern, Hannah L.; Wang, Ruizhi; Fan, Ye; Mizuta, Ryo; Stewart, James C.; Needham, Lisa-Maria; Roberts, Trevor D.; Wai, Rebecca B.; Ginsberg, Naomi S.; Klenerman, David; Hofmann, Stephan; Lee, Steven F.

doi:10.1021/acsnano.9b00274

Cited by 60 publications

(89 citation statements)

References 62 publications

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“…The SPEs are derived from various h‐BN samples, including commercial powder, [ 165 ] spanning single crystals, [ 166,167 ] exfoliated flakes, [ 16,168 ] and epitaxial films. [ 169–171 ] In addition, the performance of emitters can be tuned by strain, [ 172 ] plasma processing, [ 173 ] thermal annealing, [ 174 ] ion or electron irradiation, [ 175,176 ] which renders various applications further.…”

Section: H‐bn Applications For Optoelectronicsmentioning

confidence: 99%

Atomically Thin Hexagonal Boron Nitride and Its Heterostructures

et al. 2020

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Atomically thin hexagonal boron nitride (h‐BN) is an emerging star of 2D materials. It is taken as an optimal substrate for other 2D‐material‐based devices owing to its atomical flatness, absence of dangling bonds, and excellent stability. Specifically, h‐BN is found to be a natural hyperbolic material in the mid‐infrared range, as well as a piezoelectric material. All the unique properties are beneficial for novel applications in optoelectronics and electronics. Currently, most of these applications are merely based on exfoliated h‐BN flakes at their proof‐of‐concept stages. Chemical vapor deposition (CVD) is considered as the most promising approach for producing large‐scale, high‐quality, atomically thin h‐BN films and heterostructures. Herein, CVD synthesis of atomically thin h‐BN is the focus. Also, the growth kinetics are systematically investigated to point out general strategies for controllable and scalable preparation of single‐crystal h‐BN film. Meanwhile, epitaxial growth of 2D materials onto h‐BN and at its edge to construct heterostructures is summarized, emphasizing that the specific orientation of constituent parts in heterostructures can introduce novel properties. Finally, recent applications of atomically thin h‐BN and its heterostructures in optoelectronics and electronics are summarized.

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Section: H‐bn Applications For Optoelectronicsmentioning

confidence: 99%

Atomically Thin Hexagonal Boron Nitride and Its Heterostructures

et al. 2020

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“…One of the most promising candidates are quantum emitters in hexagonal boron nitride (hBN), which have recently emerged as a robust solid‐state platform capable of hosting bright, linearly polarized, and optically stable SPEs operating at room temperature with high photon purity . While the zero‐phonon lines (ZPLs) of hBN quantum emitters have been known to display a wide spread of energies (≈1.6–2.4 eV), implying the existence of multiple defect species, recent progress utilizing chemical vapor deposition (CVD) has shown that this spread can be reduced to ≈100 meV . This reduced ZPL energy distribution is useful both for applications and for basic studies of the defects responsible for the emissions.…”

Section: Comparison Of Emission Energy and Density Of Cvd Hbn Spes Inmentioning

confidence: 99%

“…Prior studies utilizing top down techniques, such as plasma processing, strain engineering, and electron‐beam processing have found weak correlations between the method used and the spatial location of emitters created, however, offer no control over the ZPL energy distribution. Additionally, while bottom‐up techniques have previously been shown superior to top‐down methods in terms of isolating a narrow region of emission energies, this localization has only been achieved for SPEs operating in the 550–600 nm range . By controlling the concentration of boron species supplied from the Cu catalyst, we can deterministically select the observed localized energy region to be positioned either from 550 to 600 or from 600 to 650 nm.…”

Section: Comparison Of Emission Energy and Density Of Cvd Hbn Spes Inmentioning

confidence: 99%

Selective Defect Formation in Hexagonal Boron Nitride

Abidi

Mendelson

Tran

et al. 2019

Advanced Optical Materials

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Robust and photostable single photon emitters (SPEs) underpin a number of promising quantum information science and technologies. [1][2][3][4] Solid-state quantum light sources are highly sought after for their ease of integration into onchip architectures, and rapid progress has been made recently with a variety of solidstate sources such as quantum dots, [5,6] color centers in diamond, [7,8] silicon carbide, [9,10] rare-earth materials, [11] carbon nanotubes, [12] and layered van der Waals materials. [3] One of the most promising candidates are quantum emitters in hexagonal boron nitride (hBN), which have recently emerged as a robust solid-state platform capable of hosting bright, [13][14][15][16][17] linearly polarized, [13,18] and optically stable SPEs operating at room temperature with high photon purity. [19,20] While the zerophonon lines (ZPLs) of hBN quantum emitters have been known to display a wide spread of energies (≈1.6-2.4 eV), implying the existence of multiple defect species, [15,18,[21][22][23] recent progress utilizing chemical vapor deposition (CVD) has shown that this spread can be reduced to ≈100 meV. [24,25] This reduced ZPL energy distribution is useful both for applications and for basic studies of the defects responsible for the emissions. However, to fully understand and exploit the diversity of emissions reported in hBN further advances in controlling the observed emission spectra and emitter density are required.In order to target the incorporation of particular structural defects during CVD growth, a method to modify the dominant defect formation processes is required. In situ monitoring of hBN growth on Cu has clarified that hBN growth is subject to complex interaction between the precursor species, and the catalyst surface/bulk. [26] As a result, controlling the interactions between the precursor species and the catalyst is critical to achieve highly crystalline hBN growth, but also offers a promising avenue to controlled defect engineering during CVD growth of hBN. In other material systems such as InAs/ GaAs quantum dots modifying catalyst properties such as lattice mismatch during epitaxial growth has been definitively linked to defect creation. [27] Similarly graphene is known to be dependent of the interactions with the catalyst bulk/surface, where growth depends strongly on the relative phase of the catalyst and the supply of carbon in and out of the catalyst, controlling both defect formation and density. [28,29] Despite added complications for CVD growth of hBN, especially due to Luminescent defects in hexagonal boron nitride (hBN) have emerged as promising single photon emitters (SPEs) due to their high brightness and robust operation at room temperature. The ability to create such emitters with well-defined optical properties is a cornerstone toward their integration into on-chip photonic architectures. Here, an effective approach is reported to fabricate hBN SPEs with desired emission properties in distinct spectral regions via the manipulation of boron diffusion through ...

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“…A prerequisite for applications is the controlled synthesis of materials with high quality and large area. The chemical vapor deposition (CVD) method has been widely used in the synthesis of 2D materials such as graphene, 16–19 h-BN, 20–23 and MoS 2 /WS 2 24–26 and is expected to be used in preparing β-structured Group 15 element (β-G15) films. Great challenge still remains in the synthesis of β-G15 films although single layered blue phosphorus, 27–30 bilayer Sb(111), 31–33 and few-layer antimonene 34–36 have been successfully synthesized recently.…”

Section: Introductionmentioning

confidence: 99%