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COMMUNICATIONoverlap between emission and triplet absorption in BN-PFO. [ 10 ] Therefore, the development of organic laser dyes with less spectral overlap between the excited-state absorption and emission is crucial for the realization of cw and quasi-cw lasing with low threshold.In our group, we have continuously investigated the optical and amplifi ed spontaneous emission (ASE) characteristics of many organic materials with the aim of realizing electrically pumped organic laser diodes. [21][22][23][24][25][26][27] Among them, 4,4′-bis[( Ncarbazole)styryl]biphenyl (BSBCz) is one of the most promising candidates because a vacuum-deposited fi lm of the host material 4,4′-bis( N -carbazolyl)-1,1′-biphenyl (CBP) blended with 6 wt% BSBCz, the chemical structures of which are shown in Figure 1 a, possesses outstanding optical and ASE characteristics, such as a high photoluminescence quantum yield ( Φ PL ) of nearly 100% and short PL lifetime ( τ PL ) of about 1.0 ns, leading to a large radiative decay constant ( k r ) of about 10 9 s −1 and low ASE threshold energy of about 0.3 µJ cm −2 . [ 23,26 ] In this paper, we report quasi-cw surface-emitting lasing in a distributed feedback (DFB) device based on this BSBCz:CBP blend fi lm. In this laser device, we obtained the highest repetition rate (up to 8 MHz) and the lowest threshold (on the order of 0.25 µJ cm −2 ) ever reported for a quasi-cw laser based on organic thin-fi lm systems. The incorporation of triplet quenchers is not necessary in our blend fi lm because of its high Φ PL and no signifi cant spectral overlap between the emission and triplet absorption of BSBCz. [ 24 ] In a DFB structure, a laser oscillation takes place when the following Bragg condition is satisfi ed: mλ Bragg = 2 n eff Λ , where m is the order of diffraction, λ Bragg is the Bragg wavelength, n eff is the effective refractive index of the gain medium, and Λ is the period of the grating. [ 28,29 ] When considering a second-order mode ( m = 2), the grating period is calculated to be Λ = 280 nm using the reported n eff and λ Bragg for BSBCZ. [ 21,22 ] A grating with Λ = 280 nm provides surface-emitting lasing in a direction normal to the substrate plane as shown in Figure 1 b. Although a second-order grating typically leads to a higher lasing threshold compared to a fi rst-order grating, surface-emitting lasing using a second-order grating is suitable for the fabrication of electrically pumped organic laser diodes having an organic light-emitting diode structure showing the same surface emission. [ 30,31 ] Using electron beam lithography and reactive ion etching, such gratings were directly engraved onto silicon dioxide surfaces over a 5×5 mm 2 area. Figures 1 c,d shows scanning electron microscopy (SEM) images of a representative grating fabricated in this study. We obtained Λ = 280 ± 2 nm and a grating depth of d = 70 ± 5 nm from the SEM images, which are in perfect Since the discovery of organic solid-state lasers, [1][2][3][4][5][6] great efforts have been devoted to th...