Spectrometric properties of SiC detectors based on ion-implanted p +-n junctions

Kalinina, Evgenia V.; Kossov, V.; Strokan, N. B.; Иванов, А. М.; Yafaev, R. R.; Kholuyanov, G.

doi:10.1134/s1063782606090193

Cited by 8 publications

(11 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It could be used to interpret the difference of trigger efficiency for 5mm×5mm (4.7 events/min) and 1.5mm×1.5mm (2.1 events/min) size 4H-SiC-PIN where large size has higher trigger efficiency. The MPV of energy deposition in 100 µm 4H-SiC layer is 55 MeV which is a little higher than the previous experimental result (∼42 MeV) [10] due to scattering effects by aluminum foil and LGAD as well as the ionization track is longer than 100 µm.…”

Section: Energy Response By Geant4 Simulationcontrasting

confidence: 65%

Time Resolution of the 4H-SiC PIN Detector

Yang,

Tan,

Liu

et al. 2021

Preprint

View full text Add to dashboard Cite

We report the time resolution of 100 µm 4H-SiC PIN detectors which are fabricated by Nanjing University (NJU). The time responses for β particle from 90 Sr source are investigated for the detection of the minimum ionizing particles (MIPs). The influences of different reverse voltages which correspond to carrier velocity and device sizes which correlate with capacitance for time resolution are studied. We acquired a time resolution (94±1) ps for 100 µm 4H-SiC PIN detector. A fast simulation software -RASER (RAdiation SEmiconductoR) has been developed to simulate the time resolution of 4H-SiC detector, and the simulation has been validated by the waveform comparison of RASER simulation and measured data. The simulated time resolution is (53 ± 1) ps after consider the intrinsic leading contributions of detector in time resolution.

show abstract

Section: Energy Response By Geant4 Simulationcontrasting

confidence: 65%

Time Resolution of the 4H-SiC PIN Detector

Yang,

Tan,

Liu

et al. 2021

Preprint

View full text Add to dashboard Cite

show abstract

“…The most probable values (MPVs) of the energy deposition in 100 μm 4H-SiC layer are 25 and 55 MeV for the two different energy β particles from the 90 Sr source. There are little differences with the previous experimental result (~42 MeV)[25] due to scattering effects by the aluminum foil and LGAD, which make the ionization track slightly longer than 100 μm, but the average MPV of energy deposition from these two particles is close to the experimental result.TIME RESOLUTION OF 4H-SIC PIN Waveform SamplingThe two channels are triggered at the same time with different trigger levels for waveform sampling. Trigger Ref = 25 mV and trigger DUT = 15 mV are determined by noise levels (see Figure7) to suppress noise spikes.…”

supporting

confidence: 61%

Time Resolution of the 4H-SiC PIN Detector

et al. 2022

View full text Add to dashboard Cite

We address the determination of the time resolution for the 100 μm 4H-SiC PIN detectors fabricated by Nanjing University (NJU). The time response to β particles from a 90Sr source is investigated for the detection of the minimum ionizing particles (MIPs). We study the influence of different reverse voltages, which correspond to different carrier velocities and device sizes, and how this correlates with the detector capacitance. We determine a time resolution (94 ± 1) ps for a 100 μm 4H-SiC PIN detector. A fast simulation software, termed RASER (RAdiation SEmiconductoR), is developed and validated by comparing the waveform obtained from simulated and measured data. The simulated time resolution is (73 ± 1) ps after considering the intrinsic leading contributions of the detector to time resolution.

show abstract

“…The structures with such p + -n junctions were characterized by a differential resistance of ≤ 3 × 10 -3 Ω m -2 in the forward direction and by a breakdown voltage of 1700 V. The current in a reversely biased structure exhibited a linear growth with the temperature up to 400 ° C. This was evidence of the absence of microplasma breakdowns and peripheral leakage currents in the detector structures in the entire temperature interval studied. This behavior also indicated that a low level of detector noise could be expected at elevated temperatures [5].…”

Section: Introduction Wide-bandgap Semiconductorsmentioning

confidence: 80%

“…Such an emitter can serve as an effective entrance window ensuring low energy losses. Indeed, 4H-SiC detectors with ion-doped p + -n junctions exhibited a 100% CCE for α -particle-generated charge with an energy resolution of ≤ 2% [5]. Using such structures, we have previously studied for the first time the spectrometric characteristics of detectors and four-detector arrays operating at a temperature of 170 ° C and 140 ° C, respectively [6,7].…”

Section: Introduction Wide-bandgap Semiconductorsmentioning

confidence: 99%

See 1 more Smart Citation

10.1007/s11455-008-3010-6

2010

CrossRef Listing of Deleted DOIs

View full text Add to dashboard Cite

The spectrometric characteristics of nuclear radiation detectors based on 4H-SiC films with iondoped p + -n junctions have been studied for the first time in a temperature range from 25 to 375 ° C. The experiments with 5.8-MeV α particles were performed in a high-temperature chamber of special design. Factors related to the structural characteristics of both the initial silicon carbide and the ion-doped p + -n junctions are established, which limit from above the temperature interval of detector operation in a spectrometric regime. An increase in the efficiency of the diffusion-drift charge transport with increasing temperature has been observed, which is explained by an increase in the diffusion length of minority carriers.

show abstract

Spectrometric properties of SiC detectors based on ion-implanted p +-n junctions

Cited by 8 publications

References 4 publications

Time Resolution of the 4H-SiC PIN Detector

Time Resolution of the 4H-SiC PIN Detector

Time Resolution of the 4H-SiC PIN Detector

10.1007/s11455-008-3010-6

Contact Info

Product

Resources

About