Single crystalline InAs~-xPx layers have been prepared by a vapor-phase growth technique previously used to prepare very high-quality GaAsl-xPx. These InAsl-xPz alloys exhibit electron mobilities equivalent to the highest yet reported for this system. Extensive electron mobility data is reported for the alloys at 77~At this temperature, a mobility value of 120,000 cm"/v-sec was measured for InAs, which is slightly higher than previously reported. Vegard's law is obeyed over the entire composition range. Both nand p-type doping has been achieved during vapor growth to provide a broad range of electrical resistivities and