Spectrophotometric Determination of Lead in KCl Crystals

Glasner, A.

doi:10.1002/ijch.196800065

Cited by 6 publications

(4 citation statements)

References 6 publications

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“…Crystal growth by clusters in solution has been systematically studied by Glasner and co-workers. [36][37][38][39]100 During crystal growth of KBr and KCl in an aqueous solution with Pb 2z , Glasner and Kenet 37 realised that nanometre sized nuclei were first formed in the solution and then became a growth unit. The formation of the nanometre sized clusters was confirmed by measuring the heat generated during precipitation.…”

Section: Growth Of Nanowires or Nanotubes By Charged Clustersmentioning

confidence: 99%

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Charged clusters in thin film growth

Hwang¹,

Kim²

2004

International Materials Reviews

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A cauliflower structure is a granular film composed of spherical particles similar in size, each with numerous nanoscale nodules on its surface. The structure is produced during certain chemical vapour deposition (CVD) processes for diamond and silicon thin film growth. A classical account in terms of atomic unit deposition fails to explain the growth of such a cauliflower structure, as it requires a gas phase of much higher supersaturation than for onset of diffusion controlled growth. Another interesting and somewhat puzzling phenomenon encountered during a diamond CVD process is that while diamond is depositing on a graphite substrate, carbon atoms in the graphite itself are etched away into the vapour phase; that is, experience evaporation. Again, an elementary kinetic barrier mechanism fails to explain such CVD deposition of a less stable diamond phase combined with simultaneous evaporation of a stable graphite phase. In order to account for such puzzling CVD phenomena and others, a theory of charged clusters has been developed over the past decade as a new paradigm for thin film growth. The theory and its applications are reviewed in this work.

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Section: Growth Of Nanowires or Nanotubes By Charged Clustersmentioning

confidence: 99%

“…Glasner and co-workers [36][37][38][39] suggested a growth mechanism similar to the TCC during their study on the crystal growth of KBr and KCl in the presence of Pb z2 in an aqueous solution. In this case, nanometre sized nuclei are formed in the solution and they become the growth unit.…”

Section: Introductionmentioning

confidence: 99%

Charged clusters in thin film growth

Hwang¹,

Kim²

2004

International Materials Reviews

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“…More than 40 years ago, a concept similar to TCN was suggested by Glasner et al [23][24][25][26] during their study on the crystal growth of KBr and KCl in the presence of Pb 2+ in an aqueous solution. In this case, nanometre-sized nuclei are formed in the solution and become the building blocks of the crystal.…”

Section: Introductionmentioning

confidence: 97%

Charged nanoparticles in thin film and nanostructure growth by chemical vapour deposition

Hwang¹,

Lee²

2010

J. Phys. D: Appl. Phys.

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The critical role of charged nanoclusters and nanoparticles in the growth of thin films and nanostructures by chemical vapour deposition (CVD) is reviewed. Advanced nanoparticle detection techniques have shown that charged gas-phase nuclei tend to be formed under conventional processing conditions of thin films and nanostructures by thermal, hot-wire and plasma CVD. The relation between gas-phase nuclei and thin film and nanostructure growth has not been clearly understood. In this review it will be shown that many films and nanostructures, which have been believed to grow by individual atoms or molecules, actually grow by the building blocks of such charged nuclei. This new growth mechanism was revealed in an attempt to explain many puzzling phenomena involved in the gas-activated diamond CVD process. Therefore, detailed thermodynamic and kinetic analyses will be made to draw the conclusion that the well-known phenomenon of deposition of less stable diamond with simultaneous etching of stable graphite should be an indication of diamond growth exclusively by charged nuclei formed in the gas phase. A similar logic was applied to the phenomenon of simultaneous deposition and etching of silicon, which also leads to the conclusion that silicon films by CVD should grow mainly by the building blocks of charged nuclei. This new mechanism of crystal growth appears to be general in many CVD and some physical vapour deposition (PVD) processes. In plasma CVD, this new mechanism has already been utilized to open a new field of plasma-aided nanofabrication.

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“…In fact, there has been great resistance to this concept of nonclassical crystallization. For example, more than 40 years ago, a concept similar to nonclassical crystallization was suggested by Glasner et al − during their study of the crystal growth of KBr and KCl in the presence of Pb 2+ in aqueous solution. At the time, their suggestion was so revolutionary as to receive severe criticism and was subsequently dismissed by the crystal growth community.…”

Section: Introductionmentioning

confidence: 99%

Nonclassical Crystallization in Low-Temperature Deposition of Crystalline Silicon by Hot-Wire Chemical Vapor Deposition

Yoo

Hong

Lee

et al. 2014

Crystal Growth & Design

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The effect of process pressure on the deposition behavior of crystalline Si films during hot-wire chemical vapor deposition was approached by nonclassical crystallization, wherein crystals grow not by individual atoms, but by nanoparticles. The size distribution of charged nanoparticles generated in the gas phase was measured using a particle beam mass spectrometer, and the nanoparticles were observed by transmission electron microscopy (TEM) after being captured from the gas phase on a TEM grid membrane. This found that, as the pressure is increased from 0.3 to 2 Torr, it is not only the size and the number of captured nanoparticles that are reduced but also the rate of deposition. An increase in the distance at which nanoparticles were captured from the hot wires under 1.5 Torr also reduced the size and number of particles; however, this tendency decreased markedly at 0.3 Torr. These results imply that the Si-H system should have a retrograde solubility, whose tendency increases with increasing pressure. The pressure dependence of the deposition behavior can be explained by nonclassical crystallization. On the basis of this understanding, the microcrystalline Si could be deposited on a glass substrate at 370 °C with an amorphous incubation layer of ∼10 nm.

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Spectrophotometric Determination of Lead in KCl Crystals

Cited by 6 publications

References 6 publications

Charged clusters in thin film growth

Charged clusters in thin film growth

Charged nanoparticles in thin film and nanostructure growth by chemical vapour deposition

Nonclassical Crystallization in Low-Temperature Deposition of Crystalline Silicon by Hot-Wire Chemical Vapor Deposition

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