Spectroscopic and crystal-field analysis of new Yb-doped laser materials

Haumesser, Paul‐Henri; Gaumé, Romain; Viana, Bruno; Antić-Fidančev, E.; Vivien, D.

doi:10.1088/0953-8984/13/23/303

Cited by 139 publications

(124 citation statements)

References 24 publications

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“…The crystal field splitting in NaGdW is similar to that found in other Yb 3+ -doped disordered DT laser hosts 7 and comparable to the splitting in the ordered monoclinic KY͑WO 4 ͒ 2 and KGd͑WO 4 ͒ 2 . 37 The crystal field calculations presented above have determined the irreducible representations of the 2 F 7/2 ͑n͒ and 2 F 5/2 ͑nЈ͒ Stark levels as specified in Fig. 7.…”

Section: Fig 4 Polarizedmentioning

confidence: 99%

Structural, spectroscopic, and tunable laser properties ofYb3+-dopedNaGd(W
Cascales
¹
,
Serrano
²
,
Esteban‐Betegón
³

et al. 2006
Phys. Rev. B
142
4
81
0
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Single crystals of Yb 3+ -doped NaGd͑WO 4 ͒ 2 with up to 20 mol % ytterbium content have been grown by the Czochralski technique in air or in N 2 +O 2 atmosphere and cooled to room temperature at different rates ͑4-250°C/h͒. Only the noncentrosymmetric tetragonal space group I4 accounts for all reflections observed in the single crystal x-ray diffraction analysis. The distortion of this symmetry with respect to the centrosymmetric tetragonal space group I4 1 / a is much lower for crystals cooled at a fast rate. Na + , Gd 3+ , and Yb 3+ ions share the two nonequivalent 2b and 2d sites of the I4 structure, but Yb 3+ ͑and Gd 3+ ͒ ions are found preferentially in the 2b site. Optical spectroscopy at low ͑5 K͒ temperature provides additional evidence of the existence of these two sites contributing to the line broadening. The comparison with the 2 F 7/2 ͑n͒ and 2 F 5/2 ͑nЈ͒ Stark energy levels calculated using the crystallographic Yb-O bond distances allows to correlate the experimental optical bands with the 2b and 2d sites. As a novel uniaxial laser host for Yb 3+ , NaGd͑WO 4 ͒ 2 is characterized also with respect to its transparency, band-edge, refractive indices, and main optical phonons. Continuous-wave Yb 3+ -laser operation is studied at room temperature both under Ti:sapphire and diode laser pumping. A maximum slope efficiency of 77% with respect to the absorbed power is achieved for the polarization by Ti:sapphire laser pumping in a three-mirror cavity with Brewster geometry. The emission is tunable in the 1014-1079 nm spectral range with an intracavity Lyot filter. Passive mode locking of this laser produces 120 fs long pulses at 1037.5 nm with an average power of 360 mW at Ϸ97 MHz repetition rate. Using uncoated samples of Yb: NaGd͑WO 4 ͒ 2 at normal incidence in simple two-mirror cavities, output powers as high as 1.45 W and slope efficiencies as high as 51% are achieved with different diode laser pump sources.

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Section: Fig 4 Polarizedmentioning

confidence: 99%

Structural, spectroscopic, and tunable laser properties ofYb3+-dopedNaGd(W
Cascales
¹
,
Serrano
²
,
Esteban‐Betegón
³

et al. 2006
Phys. Rev. B
142
4
81
0
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“…Therefore the lower level of the 2 F 5/2 manifold in Yb:YAG from ref. [ 41 ] was used to enable a valid fi t and confi rm the Yb tetragonal symmetry. The largely host independent free ion parameters were taken from fi tted absorption spectra of REs in LaF 3 .…”

Section: Methodsmentioning

confidence: 99%

“…Again, a highly compelling correspondence of the spectral features and the theoretical fi t is observed. Figure 4 b also shows the Yb 3+ energy splittings in three other hosts (YAG, [ 40 ] CsCdBr 3 , [ 41 ] and Sr 5 (PO 4 ) 3 F. [ 41 ] The wide spread in the Yb 3+ splittings in different hosts is not atypical and is due to the particular sensitivity of the Yb 3+ to the crystal fi eld interaction. [ 41 ] For example, the 2 F 7/2 manifold overall splitting in CsCdBr 3 is only 421 cm −1 but is very large (1190 cm −1 ) in Sr 5 (PO 4 ) 3 F. 3+ in three other hosts (YAG, [ 40 ] CsCdBr 3 , [ 41 ] and Sr 5 (PO 4 ) 3 F [ 41 ] are also shown.…”

Section: Silicon Band-edge-modifi Ed Rare-earth Luminescencementioning

confidence: 96%

Silicon‐Modified Rare‐Earth Transitions—A New Route to Near‐ and Mid‐IR Photonics

Lourenço

Hughes

Lai

et al. 2016

Adv Funct Materials

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1986 wileyonlinelibrary.com devices using alternative direct band gap semiconductors. This hybridization is highly undesirable, seriously violating the paramount technological and cost advantages inherent in silicon integration that has driven its exponential growth. The ultimate vision of silicon integration is a totally single silicon solution incorporating both electronic and photonic functions. Here we report a novel phenomenon-siliconmodifi ed rare-earth (RE) transitions-and demonstrate light emitting diodes (LEDs) and mid-IR photodetectors. Universally, luminescence from RE-doped semiconductors has shown only the expected characteristic intrinsic transitions; consequently emission from REs with transitions greater than the semiconductor band gap energy should not occur. Europium, ytterbium, and cerium have their lowest energy transitions well above the band gap energy of silicon. Remarkably, we see photoluminescence (PL) and electroluminescence (EL) due to Eu, Yb, and Ce in silicon but dramatically redshifted in wavelength and strikingly enhanced in intensity by up to 900 times compared with conventional RE-doped silicon LEDs. These results refute previous thinking on the interaction of REs with semiconductors and offer a promising route to effi cient, fully silicon-based, optoelectronic devices across the near-and mid-IR.Silicon photonics has seen rapid advances [1][2][3][4][5][6][7][8][9][10][11][12] and the technology is seen not just as required for next-generation computers but also as a vehicle for a wide range of other high value and important, societal, environmental, security, and health applications, such as greenhouse gas and explosive residue sensing, and fast medical diagnostics. [ 13 ] REs elements in silicon have long been considered promising for optical sources, and more recently for quantum technologies. [ 14 ] The partially fi lled inner 4 f -shell gives sharp internal transitions highly insensitive to crystal host and temperature and many of the transitions have intrinsic gain and support lasing. However, because the transitions are internal to the RE they have not been seen so far as a particularly promising route to photodetectors.Light emission at 1.54 µm due to Er ions in III-V and Si has been extensively investigated and light emitting devices successfully demonstrated although with limited effi ciency. [15][16][17][18][19][20][21] PL and EL from silicon and III-V semiconductors incorporating the RE thulium have also been achieved-transitions between the Tm 3+ lowest excited states and the ground state lead to emissions around 0.8, 1.2, and 2 µm. [22][23][24] Both Er and Tm in silicon, and indeed all others RE reported in silicon Silicon-Modifi ed Rare-Earth Transitions-A New Route to Near-and Mid-IR Photonics Manon A. Lourenço , * Mark A. Hughes , Khue T. Lai , Imran M. Sofi , Willy Ludurczak , Lewis Wong , Russell M. Gwilliam , and Kevin P. Homewood Silicon underpins microelectronics but lacks the photonic capability needed for next-generation systems and currently relies on ...

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“…At this wavelength β min = 0.06 and therefore I min = 3.27 kW cm −2 . Table 2 summarizes the values of the important spectral features and laser parameters for the Yb:LSAT crystal, with a comparable tabulation of Yb:YAG, Yb:KY(WO 4 ) 2 , Yb:Ca 4 GdO(BO 3 ) 3 and Yb:S-FAP values being presented as well. The high I sat value suggests that lasing of Yb:LSAT crystals will require a larger pumping threshold than is needed for other crystals.…”

Section: Evaluation Of the Laser Potentialitymentioning

confidence: 99%

Optical characterization and evaluation of the laser properties of Yb^{3 +}-doped (La, Sr)(Al, Ta)O₃single crystals

Zhao

Yin

et al. 2011

J. Phys.: Condens. Matter

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A Yb3+ -doped mixed-perovskite single crystal (La, Sr)(Al, Ta)O 3 (LSAT) crystal is grown by the Czochralski method. The absorption spectrum, fluorescence spectrum and fluorescence lifetime of Yb 3+ ions have been investigated, and the spectroscopic parameters of Yb:LSAT have also been calculated. This crystal exhibits a remarkably large ground-state splitting (about 1100 cm −1 ), a relatively long fluorescence lifetime (0.85 ms) and broad absorption and emission bandwidths. The results indicate that the Yb 3+ :LSAT crystal is a good candidate for diode-pumped ultrashort and tunable solid-state laser applications.

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Spectroscopic and crystal-field analysis of new Yb-doped laser materials

Cited by 139 publications

References 24 publications

Structural, spectroscopic, and tunable laser properties ofYb3+-dopedNaGd(W
Cascales
¹
,
Serrano
²
,
Esteban‐Betegón
³

et al. 2006
Phys. Rev. B
142
4
81
0
View full text Add to dashboard Cite

Structural, spectroscopic, and tunable laser properties ofYb3+-dopedNaGd(W
Cascales
¹
,
Serrano
²
,
Esteban‐Betegón
³

et al. 2006
Phys. Rev. B
142
4
81
0
View full text Add to dashboard Cite

Silicon‐Modified Rare‐Earth Transitions—A New Route to Near‐ and Mid‐IR Photonics

Optical characterization and evaluation of the laser properties of Yb^{3 +}-doped (La, Sr)(Al, Ta)O₃single crystals

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Spectroscopic and crystal-field analysis of new Yb-doped laser materials

Cited by 139 publications

References 24 publications

Structural, spectroscopic, and tunable laser properties ofYb3+-dopedNaGd(WCascales1, Serrano2, Esteban‐Betegón3 et al. 2006Phys. Rev. B1424810View full textAdd to dashboardCite

Structural, spectroscopic, and tunable laser properties ofYb3+-dopedNaGd(WCascales1, Serrano2, Esteban‐Betegón3 et al. 2006Phys. Rev. B1424810View full textAdd to dashboardCite

Silicon‐Modified Rare‐Earth Transitions—A New Route to Near‐ and Mid‐IR Photonics

Optical characterization and evaluation of the laser properties of Yb3 +-doped (La, Sr)(Al, Ta)O3single crystals

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Product

Resources

About

Structural, spectroscopic, and tunable laser properties ofYb3+-dopedNaGd(W
Cascales
¹
,
Serrano
²
,
Esteban‐Betegón
³

et al. 2006
Phys. Rev. B
142
4
81
0
View full text Add to dashboard Cite

Structural, spectroscopic, and tunable laser properties ofYb3+-dopedNaGd(W
Cascales
¹
,
Serrano
²
,
Esteban‐Betegón
³

et al. 2006
Phys. Rev. B
142
4
81
0
View full text Add to dashboard Cite

Optical characterization and evaluation of the laser properties of Yb^{3 +}-doped (La, Sr)(Al, Ta)O₃single crystals