1992
DOI: 10.1063/1.107680
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Spectroscopic ellipsometric measurements of the dielectric function of germanium dioxide films on crystal germanium

Abstract: ,,nTIC S UL27 12U 92-20007eroduction in whole or in part is permitted for any purpose of the United States Goverrzmnt.This docment has been approved for public release and sale; its distribution is unlimited. This dwm-nt has been approved for public release and sale, distribution of this dcument is unlimited. REPORT DOCUMENTATION PAGE ABSTRACT (Maximum 200 words)From spectroscopic ellipsometry measurements in the 1.5 to 5.7 eV photon energy range we determined the cciplex dielectric function of thermally gron … Show more

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Cited by 35 publications
(12 citation statements)
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“…The surface layer was modeled as a GeO 2 layer in the visible-UV range. 21 A rough layer was used in the infrared range where the oxide optical constants are not known. 18 The pre-implanted Ge substrate and GeSn films were characterized separately, and the dielectric function obtained was used in tabulated form in the model.…”
mentioning
confidence: 99%
“…The surface layer was modeled as a GeO 2 layer in the visible-UV range. 21 A rough layer was used in the infrared range where the oxide optical constants are not known. 18 The pre-implanted Ge substrate and GeSn films were characterized separately, and the dielectric function obtained was used in tabulated form in the model.…”
mentioning
confidence: 99%
“…In addition, each period of the SL is assumed to be identical in terms of both the thicknesses and optical properties. The native oxide has been simulated using the dielectric function for GeO2 taken from the literature [15]. The results of the VASE analysis are shown in Table I; the period and average Si content were calculated from the individual layer thicknesses and x.…”
Section: And Discussionmentioning
confidence: 99%
“…However, since the deposition of high-κ material usually occurs in an oxidizing ambient [6], [7], germanium substrate could be oxidized to form the water-soluble and unstable germanium oxide (GeO x ) [8], [9]. To overcome this problem, various processes were used to improve the interface quality, including NH 3 surface treatment [2]- [5], to form a GeO x N y interlayer, and Si interlayer technique with several monolayers of Si grown between the dielectric and the substrate by SiH 4 surface annealing [10], [11].…”
Section: Introductionmentioning
confidence: 99%