Spectroscopic ellipsometry studies on hydrogenated amorphous silicon thin films deposited using DC saddle field plasma enhanced chemical vapor deposition system

Saha, Jhantu Kumar; Bahardoust, Barzin; Leong, Keith; Gougam, Adel; Kherani, Nazir P.; Żukotyński, S.

doi:10.1016/j.tsf.2010.12.074

Cited by 12 publications

(6 citation statements)

References 23 publications

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“…At temperatures below the epitaxial growth region, increasing the substrate temperature improves the passivation quality as the additional thermal energy assists in hydrogen diffusion in the developing a-Si:H film leading to additional passivation of dangling bonds present at the interface. Other studies using a-Si:H grown by PECVD have shown this same onset of epitaxial growth for substrate temperatures at~200°C [39,40].…”

Section: Effect Of Substrate Temperature On the A-si:h-c-si Interfacesupporting

confidence: 59%

“…This sudden decline in passivation quality is attributed to the onset of epitaxial or mixed-phase growth for substrate temperatures above 190°C. Epitaxial and microcrystalline silicon is known to provide poor surface passivation to c-Si as these films do not provide the abrupt smooth interface and hydrogen content required to passivate the c-Si surface [31,39]. At temperatures below the epitaxial growth region, increasing the substrate temperature improves the passivation quality as the additional thermal energy assists in hydrogen diffusion in the developing a-Si:H film leading to additional passivation of dangling bonds present at the interface.…”

Section: Effect Of Substrate Temperature On the A-si:h-c-si Interfacementioning

confidence: 99%

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High quality amorphous–crystalline silicon heterostructure prepared by grid-biased remote radio-frequency plasma enhanced chemical vapor deposition

Mahtani

Leong

Jovet

et al. 2012

Journal of Non-Crystalline Solids

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Section: Effect Of Substrate Temperature On the A-si:h-c-si Interfacesupporting

confidence: 59%

Section: Effect Of Substrate Temperature On the A-si:h-c-si Interfacementioning

confidence: 99%

High quality amorphous–crystalline silicon heterostructure prepared by grid-biased remote radio-frequency plasma enhanced chemical vapor deposition

Mahtani

Leong

Jovet

et al. 2012

Journal of Non-Crystalline Solids

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“…Optical model for SE thickness measurement was calibrated against transmission electron microscopy (TEM) measurement and has been reported by Saha et al . . The excess carrier density (ECD) dependent effective minority carrier lifetime, τ eff , was measured using a Sinton Silicon Wafer Lifetime Tester WCT‐120 system.…”

Section: Methodsmentioning

confidence: 99%

Back amorphous‐crystalline silicon heterojunction (BACH) photovoltaic device with facile‐grown oxide ‐ PECVD SiN_x passivation

Chowdhury

Kherani

2014

Progress in Photovoltaics

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This article reports on the integration of facile native oxide-based passivation of crystalline silicon surfaces within the back amorphous-crystalline silicon heterojunction solar cell concept. The new passivation scheme consists of 1-nm thick native oxide and nominally 70-nm thick PECVD silicon nitride. The low temperature passivation scheme provides uniform high quality surface passivation and low parasitic optical absorption. The interdigitated doped hydrogenated amorphous silicon layers were deposited on the rear side of the silicon wafer using the direct current saddle field PECVD technique. A systematic analysis of a series of back amorphous-crystalline silicon heterojunction cells is carried out in order to examine the influence of the various cell parameters (interdigital gap, n-doped region width, ratio of widths of p, and n-doped regions) on cell performance. A photovoltaic conversion efficiency of 16.7% is obtained for an untextured cell illuminated under AM 1.5 global spectrum (cell parameters: V OC of 641 mV, J SC of 33.7 mA-cm -2 and fill factor of 77.3%). Copyright

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“…The obtained E g as a function of applied RF power together with the average deposition rate are both plotted in Figure 3( Another feature of the present films is the higher optical band gap E g than that reported in Refs. [34][35][36] where E g was obtained by the methods other than Tauc method (spectroscopic ellipsometry and surface photovoltage spectroscopy).…”

Section: Optical Band Gap and Deposition Ratementioning

confidence: 99%

High‐Density Plasma‐Enhanced Chemical Vapor Deposition of Si‐Based Materials for Solar Cell Applications

Zhou¹,

Xu²,

Xiao³

2016

Chemical Vapor Deposition - Recent Advances and Applications in Optical, Solar Cells and Solid State Devices

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High-quality and low-cost fabrication of Si-based materials, in which many fundamental and technology problems still remain, have attracted tremendous interests due to their wide applications in solar cell area. Low-frequency inductively coupled plasma (LFICP) provides a new and competitive solution, thanks to its inherent advantages of high-density plasma, low sheath potential, and low electron temperature, etc. The plasma characteristic-dependent microstructures, optical and electronic properties of the LFICP CVD-based hydrogenated amorphous/microcrystalline silicon and silicon oxides are systematically studied. Remote-LFICP combing the high-density plasma nature of ICP and mild ion bombardment on growing surface in remote plasma allows the deposition of high-quality Si-based materials providing excellent c-Si surface passivation. The mechanism of surface passivation by LFICP CVD Si-based materials, interaction between plasma species and growing surface are analyzed in terms of the plasma properties. These results pave the way for LFICP CVD utilization in Si-based high-efficiency and low-cost solar cell fabrication.

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Spectroscopic ellipsometry studies on hydrogenated amorphous silicon thin films deposited using DC saddle field plasma enhanced chemical vapor deposition system

Cited by 12 publications

References 23 publications

High quality amorphous–crystalline silicon heterostructure prepared by grid-biased remote radio-frequency plasma enhanced chemical vapor deposition

High quality amorphous–crystalline silicon heterostructure prepared by grid-biased remote radio-frequency plasma enhanced chemical vapor deposition

Back amorphous‐crystalline silicon heterojunction (BACH) photovoltaic device with facile‐grown oxide ‐ PECVD SiN_x passivation

High‐Density Plasma‐Enhanced Chemical Vapor Deposition of Si‐Based Materials for Solar Cell Applications

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Spectroscopic ellipsometry studies on hydrogenated amorphous silicon thin films deposited using DC saddle field plasma enhanced chemical vapor deposition system

Cited by 12 publications

References 23 publications

High quality amorphous–crystalline silicon heterostructure prepared by grid-biased remote radio-frequency plasma enhanced chemical vapor deposition

High quality amorphous–crystalline silicon heterostructure prepared by grid-biased remote radio-frequency plasma enhanced chemical vapor deposition

Back amorphous‐crystalline silicon heterojunction (BACH) photovoltaic device with facile‐grown oxide ‐ PECVD SiNx passivation

High‐Density Plasma‐Enhanced Chemical Vapor Deposition of Si‐Based Materials for Solar Cell Applications

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Back amorphous‐crystalline silicon heterojunction (BACH) photovoltaic device with facile‐grown oxide ‐ PECVD SiN_x passivation