2014
DOI: 10.1103/physrevb.90.155205
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Spectroscopic evidence for trap-dominated magnetic field effects in organic semiconductors

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Cited by 18 publications
(17 citation statements)
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“…Finally, it would be worthwhile to compare our case and the polymer-based OLED reported before. 13 Cox et al experimentally reported the long tail EL and its sign change in MEL for the polymer-based OLED, and they successfully explained their results in terms of trap-site ShockeyRead-Hall (SRH) mechanism and magnetic field effect on the spin-mixing at trap sites. 13 The similar SRH effects could also be induced by the trap enrichment with the molecular assembly and might be the physical origins of the present observations.…”
Section: All Article Content Except Where Otherwise Noted Is Licensmentioning
confidence: 94%
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“…Finally, it would be worthwhile to compare our case and the polymer-based OLED reported before. 13 Cox et al experimentally reported the long tail EL and its sign change in MEL for the polymer-based OLED, and they successfully explained their results in terms of trap-site ShockeyRead-Hall (SRH) mechanism and magnetic field effect on the spin-mixing at trap sites. 13 The similar SRH effects could also be induced by the trap enrichment with the molecular assembly and might be the physical origins of the present observations.…”
Section: All Article Content Except Where Otherwise Noted Is Licensmentioning
confidence: 94%
“…13 Cox et al experimentally reported the long tail EL and its sign change in MEL for the polymer-based OLED, and they successfully explained their results in terms of trap-site ShockeyRead-Hall (SRH) mechanism and magnetic field effect on the spin-mixing at trap sites. 13 The similar SRH effects could also be induced by the trap enrichment with the molecular assembly and might be the physical origins of the present observations. Detailed structure-properties relationship studies with small molecules should further deepen our understanding of MEL effects with molecular materials in the future.…”
Section: All Article Content Except Where Otherwise Noted Is Licensmentioning
confidence: 94%
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“…10 The magnetoresistance effect is therefore amongst the largest of any nonmagnetic bulk material. OMAR immediately garnered much attention from the scientific community [6][7][8][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30] because of its huge potential that could be translated into intriguing technological applications. OMAR devices do not require ferromagnetic electrodes which offers a much higher degree of freedom in the material choice not achievable for other magnetoresistive or conventional organic-based spintronic devices.…”
Section: Organic Magnetoresistance (Omar) Effects 11 Introduction Tomentioning
confidence: 99%
“…调控, 从而影响器件的传导电流, 这就是有机发光器 件中的磁电导(magneto-conductance, MC)效应. 此外, 由于陷阱是带隙中具有能量的局域态, 并且是无序 或结晶有机半导体中不可避免的成分, 因此常能够 束缚有机光电子器件中的电荷或激子, 但在具体研 究工作中它们的影响常被忽略 [15,16] . 若考虑器件中 陷阱的存在, T激子的淬灭作用还包括两种通道: (1) 自由的T激子与束缚的极化子相互作用(free triplettrapped polaron interaction, TP t I, T+P t →S 0 +P) [13,17~21] ;…”
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