Spectroscopic infrared scanning near-field optical microscopy (IR-SNOM)

Vobornik, Dušan; Margaritondo, G.; Sanghera, J.S.; Thielen, Peter A.; Aggarwal, Ishwar D.; Ivanov, B.; Tolk, N. H.; Manni, Vanessa; Grimaldi, Settimio; Lisi, Antonella; Rieti, Sabrina; Piston, David W.; Generosi, R.; Luce, M.; Perfetti, P.; Cricenti, A.

doi:10.1016/j.jallcom.2005.02.057

Cited by 26 publications

(15 citation statements)

References 20 publications

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“…Finally, all images at all wavelengths from different samples (Cricenti et al 2002;Cricenti et al 2003;Vobornik et al 2005;Generosi et al 2006;Cricenti et al 2007) confirm the conclusion that the optical resolution seen in our experiments is not due to a topographical structure. In fact, the two resolutions are not directly related and the resolution is different between the topology image and the optical image.…”

Section: Nanoimaging Of Biological Cellssupporting

confidence: 86%

Optical techniques for pump-probe magnetic measurements and nanoimaging of biological samples

Cricenti

Colonna

Placidi

et al. 2011

Rend. Fis. Acc. Lincei

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Fast pump-probe magneto-optic techniques have been used to investigate the hot carrier and magnetization dynamics in InAs nanostructures deposited on GaAs(001). From these time resolved reflectivity and Faraday rotation measurements, different dynamics responses were found for samples containing different InAs thicknesses. We also present some results of near field spectroscopy with infrared radiation emitted by a free electron laser to investigate biological samples. The local reflectivity revealed features as a function of photon energy that were not present in the corresponding shear-force (topology) images and were due to localized changes in the bulk properties of the sample.

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Section: Nanoimaging Of Biological Cellssupporting

confidence: 86%

Optical techniques for pump-probe magnetic measurements and nanoimaging of biological samples

Cricenti

Colonna

Placidi

et al. 2011

Rend. Fis. Acc. Lincei

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“…We introduce IR s-SNOM as a method of choice, as SNOM generally extends SPM by the optical near-field interaction between tip and sample, and it thus enables the power of optical spectroscopies, such as fluorescence, [13] Raman, [14,15] or IR, [6,[16][17][18][19][20][21][22][23] to be exploited with nanoscale spatial resolution.…”

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confidence: 99%

Simultaneous IR Material Recognition and Conductivity Mapping by Nanoscale Near‐Field Microscopy

et al. 2007

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Nanostructures are at the heart of ever-shrinking electronic and photonic devices. The engineering of nanocomposite materials, building blocks, [1,2] and conduction properties [3,4] necessitate advanced microscopy tools to assess critical dimensional, compositional, structural, and conduction properties for analysis and quality control. [5] Here we demonstrate with industrial bipolar and metal-oxide-semiconductor (MOS) devices that mid-IR scattering-type near-field optical microscopy (s-SNOM) [6,7] has the potential to probe all of these parameters, and thereby excels electron and other scanning-probe microscopies. . We image cross sections of the devices routinely prepared for failure analysis at 30 nm resolution, and this limit could be pushed below 10 nm in the course of future development. Resolution combined with high specificity to material and conductivity properties makes IR s-SNOM a promising tool beyond the microelectronics field for chemical nanotechnology, molecular electronics, photonics, and bioanalytics.IR spectroscopy has tremendous merit in the chemical and structural analyses of materials and in conduction assessment, but until now the limited spatial resolution has prevented its application in industrial failure analysis and quality control. Instead, scanning electron microscopy (SEM) is employed, which offers nanoscale resolution and sensitivity to materials, particularly when combined with Auger, energy-dispersive X-ray (EDX), or wavelength-dispersive X-ray (WDX) spectroscopies. However, only qualitative doping information with decoration-etched samples can be obtained. Transmission electron microscopy (TEM) offers elemental sensitivity [8,9] in combination with EDX or electron energy loss spectroscopy (EELS), but it suffers from complicated and time-consuming sample preparation. Moreover, the feature sizes of semiconductor structures have already been reduced below the minimum thickness of TEM samples so that details can no longer be imaged.[10] Scanning probe microscopy (SPM) provides topography, and in the extended versions of scanning capacitance microscopy (SCM) [11] and scanning spreading resistance microscopy (SSRM), also doping [12] but poor material sensitivity. We introduce IR s-SNOM as a method of choice, as SNOM generally extends SPM by the optical near-field interaction between tip and sample, and it thus enables the power of optical spectroscopies, such as fluorescence, [13] Raman, [14,15] or IR, [6,[16][17][18][19][20][21][22][23] to be exploited with nanoscale spatial resolution.In particular, IR s-SNOM has a demonstrated specificity to chemical composition, [22,24] material category, [7] structural variation, [25,26] and electrical conduction. [17,27,28] Our IR s-SNOM technique is based on atomic force microscopy (AFM) as described previously; [6,29] imaging relies on a commercial, Pt-coated, cantilevered tip operating in tapping mode (frequency X ≈ 30 kHz) with a 20-30 nm radius of curvature. The tip is illuminated by a focused CO 2 laser beam at a wavelength k = 10.7 lm. Th...

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“…However during growth there are three possible different phases of BN: Hexagonal, Wurtzite and Cubic.In order to characterize a so obtained BN surface it is important to evaluate the three different phases in films grown on silicon. This is an example that spectroscopic SNOM could provide fine chemical and structural information on a microscopic scale [22]. Specifically, the experiment targeted different vibrational modes corresponding to different crystallographic phases.…”

Section: Boron Nitridementioning

confidence: 99%

Scanning near‐field optical microscopy (SNOM)

Cricenti

2008

Phys. Status Solidi (c)

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The advent of Scanning Near‐field Optical Microscopy (SNOM) has augmented at a microscopic level the usefulness of optical spectroscopy and two‐dimensional imaging of chemical constituents makes this a very attractive and powerful new approach. In this paper we will review various configurations of the SNOM technique and some representative results obtained in material science and on biological samples by means of shear‐force, reflectivity and fluorescence, with a lateral resolution well below the diffraction limit. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Spectroscopic infrared scanning near-field optical microscopy (IR-SNOM)

Cited by 26 publications

References 20 publications

Optical techniques for pump-probe magnetic measurements and nanoimaging of biological samples

Optical techniques for pump-probe magnetic measurements and nanoimaging of biological samples

Simultaneous IR Material Recognition and Conductivity Mapping by Nanoscale Near‐Field Microscopy

Scanning near‐field optical microscopy (SNOM)

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