Spectroscopic Investigation of Neutral Niobium in GaAs

Ammerlahn, D.; Clerjaud, B.; Côté, D.; Köhne, L.; Krause, Mario; Bimberg, D.

doi:10.4028/www.scientific.net/msf.258-263.911

Cited by 3 publications

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“…Similar magnetic ions are found in other common semiconductors and remain largely unexplored [56][57][58]. Small molecules that reproduce the basic structural characteristics of the ions studied here can be synthesized [59,60] and would enable fine tuning of the local quantum environment via ligand design.…”

Section: Discussionmentioning

confidence: 52%

Resonant optical spectroscopy and coherent control ofCr4+spin ensembles in SiC and GaN

et al. 2017

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Spins bound to point defects are increasingly viewed as an important resource for solid-state implementations of quantum information and spintronic technologies. In particular, there is a growing interest in the identification of new classes of defect spin that can be controlled optically. Here, we demonstrate ensemble optical spin polarization and optically detected magnetic resonance (ODMR) of the S = 1 electronic ground state of chromium (Cr 4+ ) impurities in silicon carbide (SiC) and gallium nitride (GaN). Spin polarization is made possible by the narrow optical linewidths of these ensembles (<8.5 GHz), which are similar in magnitude to the ground state zero-field spin splitting energies of the ions at liquid helium temperatures. This allows us to optically resolve individual spin sublevels within the ensembles at low magnetic fields using resonant excitation from a cavity-stabilized, narrow-linewidth laser. Additionally, these near-infrared emitters possess exceptionally weak phonon sidebands, ensuring that >73% of the overall optical emission is contained with the defects' zero-phonon lines. These characteristics make this semiconductor-based, transition metal impurity system a promising target for further study in the ongoing effort to integrate optically active quantum states within common optoelectronic materials.

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