Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes

Tomm, Jens W.; Müller, Roland; Bärwolff, A.; Elsaesser, Thomas; Gerhardt, A.; Donecker, J.; Lorenzen, Dirk; Daiminger, Franz X.; Weiss, S.; Hütter, Matthias; Kaulfersch, E.; Reichl, H.

doi:10.1063/1.370870

Cited by 28 publications

(9 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2 Spectroscopic strain measurements are done by the FTPC technique using a BRUKER IFS 66v FTspectrometer. [4][5][6][7] This technique employs the absorption properties of the 'cm-bars' and allows for spatially resolved measurements of the QW-transition energies along the bars. These energies are characteristically shifted by the packaging-induced stress and the spatial distribution of these shifts along the device serves as a quantitative measure of the stress distribution.…”

Section: Methodsmentioning

confidence: 99%

Transient thermal tuning properties of single emitters in actively cooled high-power cm-bar arrays

et al. 2004

View full text Add to dashboard Cite

Transient thermal properties of actively cooled InAlGaAs-based high-power diode laser arrays, so-called 'cm-bars', are investigated for 'low-frequency' pulsed operation with a repetition rate of 0.1-10 Hz. Under these operation conditions the devices experience almost complete thermal cycles between the temperature of the heat sink and the operation temperature typical for continuous wave operation. We analyze the thermal tuning behavior that is governed by the thermal bandgap shift (85%) but substantially modified by pure pressure tuning (15%). During operation further modification arises from inhomogeneous temperature distribution along the 'cm-bar'. Our results offer the possibility specifying optimum operation condition of 'low-frequency' pulsed operation resulting in improved reliability.

show abstract

Section: Methodsmentioning

confidence: 99%

Transient thermal tuning properties of single emitters in actively cooled high-power cm-bar arrays

et al. 2004

View full text Add to dashboard Cite

show abstract

“…This increasing injection current increases the temperature of the junction, the opposite of what happens in constant-current mode [34]. Phenomenological classification of degradation modes [35][36][37][38]: gradual degradation, rapid degradation and sudden degradation also called catastrophic degradation is as follows:…”

Section: Thermal Processes In Semiconductor Lasers Basic Degradation ...mentioning

confidence: 99%

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Pierścińska

2017

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

show abstract

“…expected for In soldering, amounts to T × α ∼ −0.0013 (compression). Due to plastic and elastic relaxation (within solder and heat sink), only half of this value is indeed observed as elastic strain within the bars [4,5,8,9].…”

Section: Diode Laser Bars and Packagesmentioning

confidence: 99%

Spectroscopic analysis of packaging concepts for high-power diode laser bars

Hempel¹,

Ziegler

Schwirzke-Schaaf³

et al. 2012

Appl. Phys. A

View full text Add to dashboard Cite

Double-side cooled high-power diode laser bars packaged by different techniques on different types of passive heat sinks are analyzed in terms of packaging-induced strain. Reference data from standard devices being singleside cooled only and packaged by conventional soft and hard soldering are also presented. Thermal profiling across the devices complements the results. The most suitable packaging architecture and technique for double-side cooled bars is identified. Measurements of the laser emission near field and electroluminescence pattern provide direct reference to the functionality of the devices. Furthermore, a type of cross calibration of the methods used for strain analysis is made, since all techniques are applied to the same set of bars. This involves micro photoluminescence, micro Raman, and degree-of-polarization electroluminescence spectroscopy.

show abstract

Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes

Cited by 28 publications

References 7 publications

Transient thermal tuning properties of single emitters in actively cooled high-power cm-bar arrays

Transient thermal tuning properties of single emitters in actively cooled high-power cm-bar arrays

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Spectroscopic analysis of packaging concepts for high-power diode laser bars

Contact Info

Product

Resources

About