Spectroscopic performance of thick HgI/sub 2/ detectors

Meng, Ling-Jian; He, Zhong; Alexander, B.; Sandoval, J.

doi:10.1109/tns.2006.873714

Cited by 17 publications

(11 citation statements)

References 15 publications

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“…For example, techniques for imaging the interiors of materials using X-rays and γ -rays such as X-ray computed tomography (CT) have been used 1, 2 in the medical field and for baggage inspection at airports. 3,4 Moreover, new techniques for imaging the interiors of metallic materials are being researched. For this purpose, neutron radiation will likely be important, because X-rays and γ -rays, unlike neutrons, exhibit low penetration into heavy-element materials.…”

confidence: 99%

Neutron detection using boron gallium nitride semiconductor material

Atsumi¹,

Inoue²,

Mimura³

et al. 2014

APL Materials

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In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to α-rays but poor sensitivity to γ-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after α-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

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confidence: 99%

Neutron detection using boron gallium nitride semiconductor material

Atsumi¹,

Inoue²,

Mimura³

et al. 2014

APL Materials

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“…Similar methods have been used extensively for improving the energy resolution in CZT and CdTe detectors [45, 46]. Note that with the measured WF, it would be possible to use many digital signal-processing techniques to extract the energy information [47]. We chose to use this technique because it requires a minimum amount of digital processing and therefore computation, which is desired for high count rates.…”

Section: Methodsmentioning

confidence: 99%

Hybrid Pixel-Waveform (HPWF) Enabled CdTe Detectors for Small Animal Gamma-Ray Imaging Applications

Gröll

Kim

Bhatia

et al. 2017

IEEE Trans. Radiat. Plasma Med. Sci.

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This paper presents the design and preliminary evaluation of small-pixel CdTe gamma ray detectors equipped with a hybrid pixel-waveform (HPWF) readout system for gamma ray imaging applications with additional discussion on CZT due to its similarity. The HPWF readout system utilizes a pixelated anode readout circuitry which is designed to only provide the pixel address. This readout circuitry works in coincidence with a high-speed digitizer to sample the cathode waveform which provides the energy, timing, and depth-of-interaction (DOI) information. This work focuses on the developed and experimentally evaluated prototype HPWF-CdTe detectors with a custom CMOS pixel-ASIC to readout small anode pixels of 350 μm in size, and a discrete waveform sampling circuitry to digitize the signal waveform induced on the large cathode. The intrinsic timing, energy, and spatial resolution were experimentally evaluated in this paper in conjunction with methods for depth of interaction (DOI) partitioning of the CdTe crystal. While the experimental studies discussed in this paper are primarily for evaluating HPWF detectors for small animal PET imaging, these detectors could find their applications for ultrahigh-resolution SPECT and other imaging modalities.

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“…HgI 2 is a leading choice for both x-ray and gamma-ray detectors when room temperature operation is required [17-19]. Indeed, single-crystal HgI 2 spectrometers are commercially available that provide an energy resolution of 3% or less [4], and Meng et al have reported a pixilated single-crystal device with <1% [18] (both: FWHM@662 keV). An important characteristic is mobility-lifetime product, which is a measure of the charge collection efficiency in the material.…”

Section: Mercuric Iodide Characteristicsmentioning

confidence: 99%

Polycrystalline Mercuric Iodide Films on CMOS Readout Arrays

Hartsough

Iwanczyk

Nygård

et al. 2009

IEEE Trans. Nucl. Sci.

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We have created high-resolution x-ray imaging devices using polycrystalline mercuric iodide (HgI 2 ) films grown directly onto CMOS readout chips using a thermal vapor transport process. Images from prototype 400×400 pixel HgI 2 -coated CMOS readout chips are presented, where the pixel grid is 30 μm × 30 μm. The devices exhibited sensitivity of 6.2 μC/Rcm 2 with corresponding dark current of ∼2.7 nA/cm 2 , and a 80 μm FWHM planar image response to a 50 μm slit aperture. X-ray CT images demonstrate a point spread function sufficient to obtain a 50 μm spatial resolution in reconstructed CT images at a substantially reduced dose compared to phosphor-coated readouts. The use of CMOS technology allows for small pixels (30 μm), fast readout speeds (8 fps for a 3200×3200 pixel array), and future design flexibility due to the use of well-developed fabrication processes.

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Spectroscopic performance of thick HgI/sub 2/ detectors

Cited by 17 publications

References 15 publications

Neutron detection using boron gallium nitride semiconductor material

Neutron detection using boron gallium nitride semiconductor material

Hybrid Pixel-Waveform (HPWF) Enabled CdTe Detectors for Small Animal Gamma-Ray Imaging Applications

Polycrystalline Mercuric Iodide Films on CMOS Readout Arrays

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