Spectroscopic properties of Yb-doped scandium based compounds Yb:CaSc2O4, Yb:SrSc2O4 and Yb:Sc2SiO5

Gaumé, Romain; Viana, Bruno; Derouet, J.; Vivien, D.

doi:10.1016/s0925-3467(02)00354-3

Cited by 66 publications

(43 citation statements)

References 10 publications

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“…They were determined by optical spectroscopic analysis and semiempirical crystal-field calculations using the simple overlap model. One could therefore compare the rather good agreement obtained between our work and data shown in [8]. The overall splitting of the 2 F 7/2 manifold of Sc(II) reaches about 1027 cm −1 in Yb:SSO while that of Yb:YSO is 964 cm −1 .…”

supporting

confidence: 83%

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Bulk crystal growth and efficient diode-pumped laser performance of Yb3+:Sc2SiO5

Zheng

Zhao

et al. 2008

Appl. Phys. B

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A bulk crystal of Yb:Sc 2 SiO 5 (Yb:SSO) with favorable thermal properties was successfully obtained by the Czochralski method. The energy level diagrams for Yb:SSO crystal were determined by optical spectroscopic analysis and semi-empirical crystal-field calculations using the simple overlap model. The full width at half maximum of the absorption band centering at 976 nm was calculated to be 24 nm with a peak absorption cross-section of 9. Table 1.As indicated in Table 1, Sc 2 SiO 5 crystal with characterizations of high thermal conductivity and negative refractive index is an excellent laser host [6]. However, the growth of Yb:Sc 2 SiO 5 single crystal with a large size is rather difficult mainly due to crystal diameter controlling [7,8]. Ivanov reported a transparent crystal slice with a diameter of 4 mm grown by the Czochralski method [9]. Furthermore, no laser action was reported on Yb:Sc 2 SiO 5 until now.In this letter, we report on the growth of 5 at. % Yb: Sc 2 SiO 5 with a large size of 25 mm in diameter, by imu Fax: +86-21-69987109, E-mail: xujun@mail.shcnc.ac.cn proving the growth conditions. The laser performances under diode-pumping are also presented. The segregation coefficient of Yb 3+ ion was detected by inductively coupled plasma atomic emission spectrometry (ICP-AES). Crystal structure was identified by X-ray diffractometry (Cu target, K α , X-pert, Hollland). The unpolarized absorption spectrum was measured with a UV/Vis/NIR spectrophotometer (Model V-570, JASCO) using Xe light as the pump source. The fluorescence spectrum was measured with a 940 nm pumping source (Jobin-Yvon TRIAX 550 spectrophotometer). A fluorescence lifetime measurement was carried out by a computer-controlled transient digitizer decay curve of emission. All measurements were performed at room temperature.

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supporting

confidence: 83%

“…However, the growth of Yb:Sc 2 SiO 5 single crystal with a large size is rather difficult mainly due to crystal diameter controlling [7,8]. Ivanov reported a transparent crystal slice with a diameter of 4 mm grown by the Czochralski method [9].…”

Section: Introductionmentioning

confidence: 99%

Bulk crystal growth and efficient diode-pumped laser performance of Yb3+:Sc2SiO5

Zheng

Zhao

et al. 2008

Appl. Phys. B

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“…Recently silicate crystals have attracted much attention [1][2][3][4][5][6][7][8][9][10][11][12], among which monoclinic biaxial orthosilicate Sc 2 SiO 5 (hereafter SSO) crystal has been of comprehensive interest due to the good physical chemical and thermal properties. A thermal conductivity of 7.5 W/m/K is lower than YAG crystal [13], however, the natural birefringence decided by the SSO crystal structure overwhelms the thermal depolarization induced by thermally stress birefringence as observed in YAG. Up to date, SSO crystal has been investigated for several rare- [19].…”

Section: Introductionmentioning

confidence: 94%

Diode-pumped continuous wave operation and passively Q-switched performances of a Nd:Sc2SiO5 laser crystal at 1.08 microns

et al. 2011

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Diode pumped continuous wave operation and passively Q-switched performances of a Nd:Sc2SiO5 laser crystal at 1.08 microns have been demonstrated. A maximum continuous wave average output power up to 1.86 W has been obtained, corresponding to an optical conversion efficiency of 20.7% and a slope efficiency of 30.4% with respect to the absorbed pump power. With a Cr 4+ :YAG wafer used as the saturable absorber, a passively Q-switched Nd:Sc 2 SiO 5 laser generated a pulse as short as 22.5 ns at a repetition rate of 20 kHz. The maximum pulse energy of 44.8 μJ was achieved, corresponding to a maximum pulse peak power of 1.66 kW. Pulse width and repetition rate versus the absorbed pump power for the passively Q-switched Nd:SSO laser with Cr 4+ :YAG

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“…SSO crystal retains the highest thermal conductivity among silicate crystals together with the striking negative calorescence coefficient which is crucial for laser operation regarding laser power resistance (Petit, 2005). The crystallographic sites, coordination and mean distance of RE-O in RE 2 SiO 5 crystals are extended for ongoing discussion on energy level splitting as shown in Table 2 (Gaume et al, 2003;Ellens et al, 1997).…”

Section: Basic Properties Of Rare Earth Oxyorthosilicate Crystalsmentioning

confidence: 99%

“…Although the large sized Yb:SSO crystal is difficult to obtain due to crystal diameter controlling, the impressive thermo-mechanical properties in SSO crystal make it an excellent performer in high power laser applications (Ivanov, 2001;Gaume et al, 2003;Campos et al, 2004). As indicated in (…”

Section: Sc 2 Siomentioning

confidence: 99%

Growth and Characterization of Ytterbium Doped Silicate Crystals for Ultra-Fast Laser Applications

Zheng¹,

Su²,

Xu³

2012

Modern Aspects of Bulk Crystal and Thin Film Preparation

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Spectroscopic properties of Yb-doped scandium based compounds Yb:CaSc2O4, Yb:SrSc2O4 and Yb:Sc2SiO5

Cited by 66 publications

References 10 publications

Bulk crystal growth and efficient diode-pumped laser performance of Yb3+:Sc2SiO5

Bulk crystal growth and efficient diode-pumped laser performance of Yb3+:Sc2SiO5

Diode-pumped continuous wave operation and passively Q-switched performances of a Nd:Sc2SiO5 laser crystal at 1.08 microns

Growth and Characterization of Ytterbium Doped Silicate Crystals for Ultra-Fast Laser Applications

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