Spectroscopic second harmonic generation as a diagnostic tool in silicon materials processing

Gielis, Jjh Joost; Stevens, Aae Alquin; Gevers, PM Paul; Beijerinck, Hcw Herman; Sanden, van de Mcm Richard; Kessels, Wmm Erwin

doi:10.1002/pssc.200562219

Cited by 3 publications

(3 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…9 the SHG spectrum for an a-Si: H film with a thickness of 9 nm deposited by HWCVD on fused silica is shown for s polarized fundamental and p polarized SHG radiation. 17 For the photon energy range applied, the SHG intensity increases with increasing photon energy and reflects a broad feature that, although not very clear, possibly has a maximum around a fundamental photon energy of ϳ1.7 eV or a SHG photon energy of ϳ3.4 eV. Figure 9 also shows the squared linear susceptibility ͉ ͑1͒ ͉ 2 of a-Si: H, as determined from spectroscopic ellipsometry measurements on films deposited under identical conditions.…”

Section: Figmentioning

confidence: 97%

“…15,16 In this article examples of real-time and spectroscopic SHG experiments with ͑hydrogenated͒ amorphous Si films on c-Si substrates using femtosecond Ti:sapphire lasers will be addressed. [17][18][19][20][21] Recently, SHG has also been applied in the field of highdielectrics. Because of its sensitivity to internal electric fields, SHG ͑or to be more precise EFISH͒ is very suitable in characterizing the charge present in thin films of high-dielectrics on c-Si.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Optical second-harmonic generation in thin film systems

Gielis

Gevers

Aarts

et al. 2008

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

Self Cite

View full text Add to dashboard Cite

Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. The surface and interface sensitive nonlinear optical technique of second-harmonic generation ͑SHG͒ is a very useful diagnostic in studying surface and interface properties in thin film systems and can provide relevant information during thin film processing. An important aspect when applying SHG is the interpretation of the SHG response. In order to utilize the full potential of SHG during materials processing it is necessary to have a good understanding of both the macroscopic and the microscopic origin of the SHG response, particularly in thin film or multilayer systems where the propagation of radiation is another important aspect that should be considered carefully. A brief theoretical overview on the origin of the SHG response and a description of the propagation of radiation will be given. Furthermore, several methods will be discussed that might reveal the possible macroscopic and microscopic origins of the SHG response in thin film systems. The different approaches will be illustrated by examples of real-time and spectroscopic SHG experiments with thin film systems relevant in Si etching and deposition environments, such as ͑1͒ hydrogenated amorphous Si films deposited by hot-wire chemical vapor deposition on both Si͑100͒ and fused silica substrates, ͑2͒ amorphous Si generated by low-energy Ar + -ion bombardment of H terminated Si͑100͒, and ͑3͒ Al 2 O 3 films deposited by plasma-assisted atomic layer deposition on H terminated Si͑100͒.

show abstract

Section: Figmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Optical second-harmonic generation in thin film systems

Gielis

Gevers

Aarts

et al. 2008

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

Self Cite

View full text Add to dashboard Cite

show abstract

“…39,40 The a-Si: H was deposited on fused silica substrates from which no SHG signal could be detected. The SHG spectrum reflected a broad feature, which, although being at the edge of the photon energy range, seemed to have a maximum at a SH photon energy of ϳ3.4 eV.…”

Section: Results Excitonic Modelmentioning

confidence: 99%

Spectroscopic second-harmonic generation duringAr+-ion bombardment of Si(100)

et al. 2006

Self Cite

View full text Add to dashboard Cite

Spectroscopic and real time optical second-harmonic generation ͑SHG͒ has been applied to gain insight into the surface and interface processes during low-energy ͑70-1000 eV͒ Ar + -ion bombardment of H terminated Si͑100͒. The Ar + -ion bombardment of the crystalline silicon ͑c-Si͒, which creates a layer of amorphous silicon ͑a-Si͒, has been studied in the SH photon energy range of 2.7-3.5 eV. The time-resolved SHG signal has been observed to increase with an order of magnitude upon ion bombardment. Spectroscopic SHG during ion bombardment and after subsequent XeF 2 dosing indicates that the SHG signal has both a contribution generated at the buried interface between the a-Si and the c-Si and an additional contribution originating from the a-Si surface. By separating these contributions using a critical point model it has been shown that the SHG spectra consist of a sharp resonance at 3.36 eV with a linewidth of 0.1 eV at the buried a-Si/ c-Si interface and a much broader resonance at a resonance energy of 3.2 eV with a linewidth of 0.5 eV at the a-Si surface. The former resonance is identified to originate from E 0 Ј/E 1 transitions between bulk electronic states in the c-Si that are modified due to the vicinity of the interface, while the latter resonance is caused by transitions related to Si-Si bonds in the surface region of the a-Si. The time-resolved dynamics of the SHG signal can help in understanding the mechanism of ion-beam and plasma etching of silicon.

show abstract

Interface studies by second-harmonic generation during silicon-based materials processing

Gielis

2008

View full text Add to dashboard Cite

Spectroscopic second harmonic generation as a diagnostic tool in silicon materials processing

Cited by 3 publications

References 16 publications

Optical second-harmonic generation in thin film systems

Optical second-harmonic generation in thin film systems

Spectroscopic second-harmonic generation duringAr+-ion bombardment of Si(100)

Interface studies by second-harmonic generation during silicon-based materials processing

Contact Info

Product

Resources

About