Spectroscopic studies of bulk AS 2 S 3 glasses and amorphous films doped with Dy, Sm and Mn

Iovu, M. S.; Shutov, S. D.; Andriesh, A. M.; Kamitsos, E. I.; Varsamis, C. P. E.; Seddon, Angela B.; Furniss, David; Popescu, M.

doi:10.1117/12.475321

Cited by 15 publications

(14 citation statements)

References 22 publications

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“…4. The broad bands indicate the amorphous structure of the films, and are mainly associated with As 2 S 3 and As 4 S 4 structural units, according to the vibrational energy presented in Table 1 [33][34][35]. As shown in Fig.…”

Section: Resultsmentioning

confidence: 90%

Single-step synthesis of silver sulfide nanocrystals in arsenic trisulfide

Almeida

Mendonça

et al. 2015

Opt. Mater. Express

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Silver sulfide nanocrystals and chalcogenide glasses (ChGs) are two distinct classes of semiconductor materials that have been exploited for new infrared technologies. Each one exhibits particular optoelectronic phenomena, which could be encompassed in a hybrid material. However, the integration of uniformly distributed crystalline phases within an amorphous matrix is not always an easy task. In this paper, we report a single step method to produce Ag 2 S nanocrystals (NCs) in arsenic trisulfide (As 2 S 3) solution. The preparation is carried out at room temperature, using As 2 S 3 , AgCl and propylamine resulting in highly crystalline Ag 2 S nanoparticles in solution. These solutions are spin-coated on glass and silicon substrates to produce As 2 S 3 /Ag 2 S metamaterials for optoelectronics.

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Section: Resultsmentioning

confidence: 90%

Single-step synthesis of silver sulfide nanocrystals in arsenic trisulfide

Almeida

Mendonça

et al. 2015

Opt. Mater. Express

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“…For the bulk As 2 Se 3 : Sn x samples the hardness H varies between 150 and 160 kg/mm 2 due to the shape of the used indenter (in [13,14] was used Vickers indenter). The mid-IR transmission spectra of As 2 S 3 , As 2 Se 3 and some (As 2 S 1.5 Se 1.5 ) 1-x :Sn x bulk glasses are shown in Fig.1 and as in the case of vitreous As 3 S 3 doped with metals [15] are characterized by several well resolved absorption bands. For vitreous As 2 S 3 these bands are located at the frequencies ν=5190 cm -1 (S-H), ν=3617-3522 cm -1 (H 2 O), ν=2482 cm -1 (S-H), ν=1857 cm -1 (As-H), ν=1597 cm -1 (H 2 O), and ν=1003 cm -1 (As 2 O 3 ), and are summarized in Table 1 Transmission T (%) Wavenumber ν (x10 3 cm -1 ) As 2 S 3 As2Se3 (As 2 S 3 ) 0,5 (As 2 Se 3 ) 0.5 (As 2 S 3 ) 0,5 (As 2 Se 3 ) 0,5 Sn 0,01 (As 2 S 3 ) 0,5 (As 2 Se 3 ) 0,5 Sn 0,02 (As2S3)0,5(As2Se3)0,5Sn0,05 (As 2 S 3 ) 0,5 (As 2 Se 3 ) 0,5 Sn 0,06 (As 2 S 3 ) 0,5 (As 2 Se 3 ) 0,5 Sn 0,07 (As2S3)0,5(As2Se3)0,5Sn0,08 (As2S3)0,5(As2Se3)0,5Sn0,09 (As 2 S 3 ) 0 From the transmission spectra T=f(λ), using the expressions…”

Section: Resultsmentioning

confidence: 98%

Spectroscopic study of amorphous As2Se3:Snx and (As2S1.5Se1.5)1-x:Snx thin films

Iaseniuc¹,

Harea²,

Iovu³

et al. 2012

SPIE Proceedings

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The transmission spectra of bulk and thin films of (As 2 S 1.5 Se 1.5 ) 1-x :Sn x in the visible and near infrared (IR) regions were investigated. Doping of As 2 S 1.5 Se 1.5 chalcogenide glass with tin impurities essentially reduce the absorption bands of S-H (Se-H) and H 2 O located at ν = 5190 cm -1 and ν = 3617 cm -1 , respectively. The amorphous As 2 Se 3 :Sn x and (As 2 S 1.5 Se 1.5 ) 1-x :Sn x thin films exhibit photoinduced effects under the light irradiation with photon energy above the optical band gap (hν≥E g ), that make its perspective materials for registration of optical and holographic information. The modification of optical parameters (optical band gap E g , absorption coefficient α, refractive index n) under light irradiation and heat treatment of the amorphous thin films with different amount of Sn was studied. The shift of the absorption edge after light exposure to lower energy region was observed, i.e. the effect of photodarkening take place. The dispersions curves n=f(λ) show a modification of the refractive index n under light exposure. For the glass composition (As 2 S 1.5 Se 1.5 ) 0.96 :Sn 0.04 the change of the optical band gap Eg opt under light exposure was determined from 1.92±0.02 eV to 1.86±0.02 eV. The similar calculations of the optical constants were done for the amorphous films of glass compositions x=0.03 and x=0.05. The relaxation of photodarkening in amorphous As 2 Se 3 :Sn x and (As 2 S 1.5 Se 1.5 ) 1-x :Sn x thin films, which is described by the stretch exponential function T(t)/T(0) = A 0 +Aexp[-(t-t 0 )/τ] (1-α) also was investigated. The experimental results are interpreted in framework of the model of molecular structure of chalcogenide glasses doped with tin impurities.

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“…For comparison the mid-IR transmission spectra of vitreous As 3 S 3 and As 3 Se 3 also was measured. As in the case of vitreous As 3 S 3 doped with metals [15], the mid-IR transmission spectra for the glasses under study are characterized by several well-resolved absorption bands. For vitreous As 2 S 3 , these bands are located at frequencies of ν = 5190 cm -1 (S-H), ν = 3617-3522 cm -1 (H 2 O), ν = 2482 cm -1 (S-H), ν = 1857 cm -1 (As-H), ν = 1597 cm -1 (H 2 O), and ν = 1003 cm -1 (As 2 O 3 ).…”

Section: Resultsmentioning

confidence: 99%

Calculation of the optical constants of amorphous [(As2S3):(As2Se3)]1-x: Snx thin films

Iaseniuc¹

2012

SPIE Proceedings

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The modifications of optical parameters (optical band gap E g , absorption coefficient α, refractive index n) under light irradiation by He-Ne laser of the amorphous thin films with different amount of Sn were measured and calculated. In the present work the transmission spectra of bulk and thin films of [(As 2 S 3 ) 0.5 :(As 2 Se 3 ) 0.5 ] 1-x :Sn x (x=0; 1; 2 at.%) in the visible and middle infrared (IR) regions were studied. The red shift of the fundamental absorption edge under light exposure was observed, and the values of the optical band gap E g opt from the graphics in Tauc coordinates (α hν) 1/2 =A(hν -Eg) were obtained. The dispersion of the refractive index was examined. The relaxation of the relative optical transmission T/T 0 =f(t) under the light exposure (λ=633nm and λ=543nm) for amorphous [(As 2 S 3 ) 0.5 :(As 2 Se 3 ) 0.5 ] 1-x :Sn x thin films also was investigated. The relaxation curves of photodarkening under light irradiation were processing using the stretched exponential presentation of the data: (1-β) , where t is the exposure time, τ is the apparent time constant, A characterizes the exponent amplitude, t 0 and A 0 are the initial coordinates, and β is the dispersion parameter (0<β<1).

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Spectroscopic studies of bulk AS 2 S 3 glasses and amorphous films doped with Dy, Sm and Mn

Cited by 15 publications

References 22 publications

Single-step synthesis of silver sulfide nanocrystals in arsenic trisulfide

Single-step synthesis of silver sulfide nanocrystals in arsenic trisulfide

Spectroscopic study of amorphous As<sub>2</sub>Se<sub>3</sub>:Sn<sub>x</sub> and (As<sub>2</sub>S<sub>1.5</sub>Se<sub>1.5</sub>)<sub>1-x</sub>:Sn<sub>x</sub> thin films

Calculation of the optical constants of amorphous [(As<sub>2</sub>S<sub>3</sub>):(As<sub>2</sub>Se<sub>3</sub>)]<sub>1-x</sub>: Sn<sub>x</sub> thin films

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