Sol-gel thin films and microcrystalline powders of SiO 2 doped with Ag and Cu were obtained under environmental conditions of pressure and temperature. The precursor material was a mixture of water, tetraethyl-orthosilicate, ethanol and aqueous solutions of Ag and Cu salts, the components were taken in ratios known to provide SiO 2 matrix material with good structure. The annealing was performed in oxidizing and reducing atmosphere, the temperature varied in the range of 100 -800 °C. Formation of metal particles of 100 nm order of magnitude was confirmed by X-ray, optical and SEM analysis. In presence of metal particles, the SiO 2 matrix was crystallized in α-cristobalite at annealing temperature as low as 500 °C, and in quartz form at 800 °C. A simple model treating the metal-induced low-temperature crystallization is presented. The material obtained is promising for the use as optical filter, gas sensing element and antibacterial agent.