Spectroscopic study of V doped Hg0.018Cd0.981Mn0.001Te bulk crystals as near-infrared materials for optical applications

Gnatenko, Yu. P.; Bukivskij, P. M.; Piryatinskiĭ, Yu. P.; Faryna, I. O.; Shigiltchoff, O.; Gamernyk, R. V.

doi:10.1063/1.3226670

Cited by 17 publications

(9 citation statements)

References 17 publications

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“…The photoluminescence spectra were measured using an SDL-1 grating spectrometer [11,12]. An LGN-404 argon laser was used for excitation by the 514 nm line, together with an FEU-62 photomultiplier in the photon-counting mode.…”

Section: Methodsmentioning

confidence: 99%

“…The low temperature photoluminescence measurements are very effective method of investigation of the defect structure in the various semiconductor materials including the polycrystalline thin films [11][12][13][14][15][16]. It allows to determine the nature and energy levels of the point defects as well as the concentration of dislocations in the films.…”

Section: Introductionmentioning

confidence: 99%

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Study of the structural and photoluminescence properties of CdTe polycrystalline films deposited by close-spaced vacuum sublimation

Kosyak

Opanasyuk

Bukivskij

et al. 2010

Journal of Crystal Growth

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a b s t r a c tThe polycrystalline CdTe films were deposited by the close-spaced vacuum evaporation at the different substrate temperatures (150-550 1C). The X-ray diffraction measurements of structural and substructural properties of these films were carried out to study their phase composition and texture. The films' parameters such as the coherent scattering domain size, microdeformation level and mean density of dislocations were determined based on the broadening of diffraction peaks. In this case the Hall and three-fold convolution approximations were used. Surface morphology, grain size and growth mechanism of the films were determined by the scanning electron microscopy. The low temperature photoluminescence measurements allowed us to establish the correlation between the point and extended defect structure on the one hand and the growth conditions on the other. As a result, the growth conditions of CdTe polycrystalline films with fairly good crystal and optical quality were determined.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Study of the structural and photoluminescence properties of CdTe polycrystalline films deposited by close-spaced vacuum sublimation

Kosyak

Opanasyuk

Bukivskij

et al. 2010

Journal of Crystal Growth

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“…At present, the PL spectra of bulk semiconductor crystals are studied well enough [21][22][23][24], but thin and thick films of these materials have not been thoroughly investigated.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Kosyak

Znamenshchykov

Čerškus

et al. 2016

Journal of Luminescence

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a b s t r a c tPolycrystalline Cd 1 À x Zn x Te thick films with thicknesses of about 30 μm have been deposited on a Mo coated glass substrate by means of close-spaced vacuum sublimation technique. X-ray diffraction measurements have shown that the films obtained have only cubic zinc blende phase. The influence of Zn concentration on the photoluminescence (PL) spectra of Cd 1 À x Zn x Te films was investigated. This let us determine the nature and energy structure of the intrinsic defects and residual impurities in the films. The presence of the most intense acceptor bound exciton A°X-line for x ¼ 0.10 and the lines of localized excitons (x ¼ 0.32 À 0.44) in PL spectra of Cd 1 À x Zn x Te films indicates their fairly good optical quality as well as the p-type conductivity. There were also other intensive broad PL bands, caused by the recombination of donor-acceptor pairs involving complex acceptor centers, extended defects of dislocation type, and microstress in the films. It was also established a correlation between the broadening of exciton lines and the values of microstress in Cd 1 À x Zn x Te thick films. Taking into account the energy position of exciton lines, the concentration dependence of the band gap for the Cd 1 À x Zn x Te thick films is presented.

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“…X-ray method was applied for determination of the microstress level ε in CdSe thin films. The PL spectra were measured using an SDL-1 grating spectrometer [12,13,19]. An LGN-404 argon laser was used for excitation by the 488.8 nm line, together with an FEU-62 photomultiplier in the photon-counting mode.…”

Section: Methodsmentioning

confidence: 99%

“…Low temperature photoluminescence (PL) measurements is a very effective method for studying the defect structure of various semiconductor materials including polycrystalline thin films [9,[12][13][14]. This makes it possible to determine the nature and energy levels of both the intrinsic defects and the residual impurities in the semiconductor materials as well as the relative concentration of dislocations in the films.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence of high optical quality CdSe thin films deposited by close-spaced vacuum sublimation

Gnatenko

Bukivskij

Faryna

et al. 2014

Journal of Luminescence

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a b s t r a c tPolycrystalline CdSe thin films (d¼ 0.1-3.0 μm) have been deposited on a glass substrate by means of the close-spaced vacuum sublimation technique. X-ray diffraction measurements have shown that the films obtained at Т s 4473 K have only wurtzite phase. The influence of deposition conditions, in particular, the substrate temperature on the photoluminescence (PL) of CdSe films spectra was investigated. This let us study the effect of glass substrate on their optical quality as well as determine the nature and energy structure of the intrinsic defects and residual impurities in the films. The presence in PL spectrum of the most intense sharp donor bound exciton D 0 X-line for CdSe films obtained at T s ¼873 K indicates the n-type conductivity and their high optical quality. Intensive PL bands in the spectral range 1.65-1.74 eV were also observed, which are associated with the recombination of donor-acceptor pairs with the participation of the shallow donor and acceptor centers caused by Na(Li) residual impurities. As a result of the study of the PL spectra of CdSe films the optimal temperature conditions of their growth were determined, namely, the substrate temperature T s ¼ 873 K and the evaporator temperature T e ¼973 K.

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Spectroscopic study of V doped Hg0.018Cd0.981Mn0.001Te bulk crystals as near-infrared materials for optical applications

Cited by 17 publications

References 17 publications

Study of the structural and photoluminescence properties of CdTe polycrystalline films deposited by close-spaced vacuum sublimation

Study of the structural and photoluminescence properties of CdTe polycrystalline films deposited by close-spaced vacuum sublimation

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Photoluminescence of high optical quality CdSe thin films deposited by close-spaced vacuum sublimation

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