Spectroscopy and micro-luminescence mapping of Xe-implanted defects in diamond

Abstract

Ion implantation in diamond creates optically active defects which have emission lines in broad spectral regions, and may be used in advanced photonics and optical communication applications. A brief review of the photoluminescence properties of Xe + ion implanted diamond is presented. The Xe-related center is of particular interest as this center is one of a few centers (Ni, Si, Cr) in diamond having sharp emission lines in the infrared spectral region, specifically at 813 and 794 nm. The paper discusses an approach to determine an important and difficult to measure conversion efficiency of implanted ions into emitting optical centers. The method uses a micro-luminescence confocal mapping and statistical analysis based on a compound Poisson distribution, accounting for both the implanted centers and the optically excited centers statistics. Results of numerical simulations and experimental measurements are presented.PACS: 78.55.-m Photoluminescence, properties and matherials; 73.20.Hb Impurity and defect levels; energy states of adsorbed species.

Optical signatures of silicon-vacancy spins in diamond

“…Recent studies of such centres include chromium- 17,18 , xenon- 19 nickel- 20 and possibly oxygen-related centres 21 , as well as the negatively charged silicon-vacancy (SiV) centre [22][23][24] . The latter has the advantage of being the brightest reported colour centre in diamond 24 .…”

Core-shell Mie resonant structures for quantum computing applications

“…32 Commercially produced nanodiamonds would be doped with Xe using ion implantation, as discussed above. 12,13,33 Coreshell structures have also been demonstrated using scalable techniques like fiber drawing, but further investigation may be needed to successfully incorporate nanodiamonds. 34 In conclusion, we have demonstrated that the core-shell Mie resonant structures offer a significant enhancement of emission rates of embedded single defect sources.…”

“…Also, at room temperature, the excited state does not radiatively decay exclusively through a single ZPL transition; instead, another ZPL line with r À r electric dipole (ED) transition at k ¼ 793 nm emerges. 13 The ratio of emission rates depends on polarization of the main and spurious ZPL lines 13 and is about P(812 nm)/P(793 nm) ¼ 5 for the spectrum shown in Fig. 1(c) in red.…”

“…The Huang-Rhys factor S for the Xe-related center is given by expðÀSÞ ¼ 0:3 at room temperature. 13,14 One of the important potential advantages of using a Xe-related center instead of a Si vacancy center is its comparatively favorable location in the fiber optic loss spectrum, further into the IR range. This property approximately doubles the maximum distance between directly connected nodes for quantum communication networks [see Figure 1(c)].…”

“…To optically pump a single Xe-related center at the ZPL transition, several excitation energies can be used. [12][13][14] Assuming a 690 nm plane wave excitation (corresponding to electric dipole absorption), we find that the core electric field intensities in the simple Mie sphere structure increase by a factor of 2, relative to the medium, which corresponds to a factor of 0.9 in the bulk diamond. Alternatively, the structure can also be excited using resonant magnetic dipole ZPL transitions.…”