Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures

Gaubas, E.; Brytavskyi, I.; Čeponis, T.; Kalendra, Vidmantas; Tekorius, A.

doi:10.3390/ma5122597

Cited by 6 publications

(9 citation statements)

References 25 publications

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“…A barrier evaluation by pulsed linearly increasing voltage (BELIV) technique [22,23] was applied to determine the temporal characteristics of the junction barrier charging and carrier generation currents within CdS junction base region. These results are discussed in more detail elsewhere [18,19], while the main features are summarized below.…”

Section: Preliminary Sorting Of the Cds Polycrystalline Structuresmentioning

confidence: 82%

“…CdS layer also makes a base region within CdS-Cu 2 S heterojunction. The previous study of these CdS-Cu 2 S layered structures show that the parameters of effective doping, of crystalline precipitates, of capacitance characteristics, and of introduced traps spectrum considerably changes [18,19], depending on layer deposition regimes, in respect of thermal and exposure processes. Thus, characterization of the carrier recombination channels and carrier decay rates is important in understanding and manipulation of the junction structures.…”

Section: Introductionmentioning

confidence: 94%

“…Study of electrical features, of X-ray diffraction (XRD) patterns [18], and of deep traps level spectroscopy in CdS-Cu 2 S structures [19] showed that several types of samples can be separated. These sample types exhibit different characteristics dependent on temperature and duration of layer deposition.…”

Section: Measurement Techniquesmentioning

confidence: 99%

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Nonradiative and Radiative Recombination in CdS Polycrystalline Structures

Gaubas

Borschak

Brytavskyi

et al. 2013

Advances in Condensed Matter Physics

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Properties of polycrystalline CdS layers, employed in formation of the CdS-Cu 2 S heterostructures, have been studied by combining contactless techniques of the time and spectrally resolved photoluminescence (TR-PL) spectroscopy and microwaveprobed photoconductivity (MW-PC) transients. The confocal microscopy has been employed to correlate the homogeneity of photoluminescence and grain size in CdS layers. Three types of samples with crystallite grain size of <1 m (the I-type) and of 2-10 m of homogeneous (II-type) and inhomogeneous (III-type) grain distribution have been separated. The simultaneous record of MW-PC and TR-PL responses ensures the same sampling area on the layer under investigation, as both (MW-PC and TR-PL) signals are generated by the same UV laser excitation beam. Two PL bands peaked at 500 and 700 nm were revealed. It has been demonstrated that photoluminescence intensity strongly depends on the properties of the polycrystalline 15-26 m thick CdS layers with equilibrium carrier density of about 1.5 × 10 13 cm −3 , which serve as the substrates to form CdS-Cu 2 S junctions. The different carrier decay components were ascribed to different microareas with characteristic MW-PC and PL decay lifetimes of 2-10 ns, ascribed to microcrystallites with PL instantaneous decay lifetimes of 40-200 ns, and MW-PC decay lifetimes in the range of 100-1000 s attributed to the inter-crystallite areas of CdS polycrystalline material.

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Section: Preliminary Sorting Of the Cds Polycrystalline Structuresmentioning

confidence: 82%

Section: Introductionmentioning

confidence: 94%

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Nonradiative and Radiative Recombination in CdS Polycrystalline Structures

Gaubas

Borschak

Brytavskyi

et al. 2013

Advances in Condensed Matter Physics

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“…23,24 In the case of s 1 , the peak at 420 nm is three times higher than the peak at 380 nm, which proves that the faster component s 1 is dominated by recombination in the CdS layer. 18,26,27 Optical pump and optical probe measurements were obtained by pumping and probing with femtosecond laser pulses (100 fs, 1 kHz). Recombination in the CdS/ZnO layers reduces the photocurrent in the device.…”

Section: Resultsmentioning

confidence: 99%

Photophysical investigation of charge recombination in CdS/ZnO layers of CuIn(S,Se)₂ solar cell

Nalla

Batabyal

et al. 2014

RSC Adv.

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Excitation wavelength dependent femtosecond transient photocurrents were measured on CuIn(S,Se) 2 solar cell devices, in the range of 330-1300 nm. Below 450 nm wavelength excitations, charge recombination in CdS/ZnO layers is determined to be responsible for longer decays and lower EQE. Femtosecond pump-probe measurements also support the charge transfer and recombination in CdS/ZnO layers. These measurements will be helpful to design high efficiency CISSe solar cells, by selecting suitable buffer layers. Experimental methods MaterialsCopper(II) chloride dihydrate (CuCl 2 $2H 2 O) (99.99%, Sigma-Aldrich), anhydrous indium(III) chloride (InCl 3 ) (99.99%, Sigma-Aldrich) and thiourea SC(NH 2 ) 2 (Sigma-Aldrich) were

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“…1, the amplitude of this peak increases linearly with enhancement of temperature. This result implies the increase of the effective doping Neff=NDNT due to trap ionization, where ND is the donor concentration and NT is the concentration of the net space charge produced by ionized traps, as these could be positively or negatively charged defects [15] The short-circuit current (ISC) dependence on photon flux (F) of the violet-light illumination (λ=405 nm) is illustrated in Fig.2, as obtained for a nonirradiated sensor. The flux of the light source was varied using optical filters and calibrated using a ThorLabs power-meter PM100D with S120VC, while a beam cross-sectional area was controlled by using a diaphragm.…”

Section: Beliv Characteristics Of Pristine Sensorsmentioning

confidence: 99%

CHARACTERISTICS OF 1.6 MeV PROTON-IRRADIATED GaN-BASED SENSORS

Meškauskaite¹,

Gaubas²,

Čeponis³

et al. 2017

RadJ

Self Cite

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Abstract. High response speed sensors made of thin GaN-based structures can be important for the optical readout of the radiation signals in harsh radiation environment at hadron accelerator facilities. In this work, the metalsemiconductor-metal structure sensors formed on the MOCVD grown GaN heterostructures have been studied. The proton-induced luminescence (PI-L) and the BELIV (barrier evaluation by linearly increasing voltage) transients have simultaneously been recorded during 1.6 MeV proton irradiation emitted by a Tandetron type accelerator. The PI-L and BELIV measurements allowed for tracing the evolution of the parameters of recombination. The radiation damage on GaN-based sensors has been examined by capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) methods. The dominant radiation defects introduced by 1.6 MeV proton beam have been unveiled.

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Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures

Cited by 6 publications

References 25 publications

Nonradiative and Radiative Recombination in CdS Polycrystalline Structures

Nonradiative and Radiative Recombination in CdS Polycrystalline Structures

Photophysical investigation of charge recombination in CdS/ZnO layers of CuIn(S,Se)₂ solar cell

CHARACTERISTICS OF 1.6 MeV PROTON-IRRADIATED GaN-BASED SENSORS

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Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures

Cited by 6 publications

References 25 publications

Nonradiative and Radiative Recombination in CdS Polycrystalline Structures

Nonradiative and Radiative Recombination in CdS Polycrystalline Structures

Photophysical investigation of charge recombination in CdS/ZnO layers of CuIn(S,Se)2 solar cell

CHARACTERISTICS OF 1.6 MeV PROTON-IRRADIATED GaN-BASED SENSORS

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Photophysical investigation of charge recombination in CdS/ZnO layers of CuIn(S,Se)₂ solar cell