Abstract:The emerging class of silicon drift detectors (SDD) will significantly improve elemental x-ray mapping as performed in the scanning electron microscope (SEM) [1,2]. Several attributes of the SDD make it particularly useful for mapping. The SDD can operate with very short time constants, with the limiting value at 1 µs or less, so that the output count rate can exceed 500 kHz, which is at least an order of magnitude faster than the conventional monolithic crystal Si-EDS for similar resolution performance [3]. M… Show more
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