Spice modeling of ionizing radiation effects in CMOS devices

Pesic-Brdjanin, Tatjana

doi:10.2298/fuee1702161p

Cited by 3 publications

(3 citation statements)

References 31 publications

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“…Further analysis is planned in order to continue research with the goal of comparing already obtained results with additional analysis of ionizing radiations' influence on GFSAs' samples produced by Littelfuse and EPCOS like investigation done for xenonfilled tube published in [27] as well as given the current attractiveness of investigations based on radiation of different types of components [28][29][30].…”

Section: Discussionmentioning

confidence: 99%

The evolution of breakdown voltage and delay time under high overvoltage for different types of surge arresters

Živanović

Zivkovic

Pejović

2021

Facta Univ Electron Energ

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The results of the reliability testing of Littelfuse and EPCOS gas-filled surge arresters for different overvoltages under DC discharge will be presented in this paper. The static breakdown voltage of these gas components was estimated using voltage increase rates ranging from 1 to 10 V/s. A detailed statistical analysis of experimental data has also been done. The delay time of these components for different nominal overvoltages has been investigated as an additional aspect important for component reliability. In addition, the delay time method was used as a statistical method which can give neither ion nor neutral active states number density in the glow and afterglow. It can be employed for qualitative observation of ions and neutral active states decay in the afterglow to such low concentrations where the other methods cannot be applied. Finally, a comparison has been done between the characteristics of two gas-filled surge arresters which have the same nominal overvoltage (Littelfuse and EPCOS) from different manufacturers.

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Section: Discussionmentioning

confidence: 99%

The evolution of breakdown voltage and delay time under high overvoltage for different types of surge arresters

Živanović

Zivkovic

Pejović

2021

Facta Univ Electron Energ

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“…In the context of electronic devices, such as transistors, exposure to radiation and temperature variations can significantly impact their performance, leading to challenges in circuit design for critical applications. Notably, the threshold voltage of pMOS (p-channel Metal-Oxide-Semiconductor) transistors becomes more negative with radiation, while nMOS (n-channel Metal-Oxide-Semiconductor) transistor threshold voltage, which is positive, decreases with temperature [1,[2][3][4]. This phenomenon is illustrated in Figure 1.…”

Section: Introductionmentioning

confidence: 93%

Reliable Temperature Measurement in Radiation-Intensive Environments

Petrashin,

Lancioni,

Laprovitta

et al. 2024

JAREE

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Radiation-resistant temperature sensors are vital for ensuring reliability in radiation-intensive environments, where the highly energetic and penetrating nature of radiation can significantly impact electronic devices and sensors. In such environments, like those near intense radiation sources or in challenging radiation-rich settings, such as space, gamma radiation can lead to erroneous measurements or equipment failures. Radiation-resistant sensors play a crucial role in maintaining measurement accuracy as they are designed to minimize interference caused by radiation, protecting electronic components and providing precise and reliable temperature readings. Their resilience to radiation-induced effects ensures data durability, reducing the need for frequent replacements, and enhancing the overall reliability of measurements in these demanding conditions. In this paper, we present and analyze two different configurations, aiming to address the challenges posed by radiation in sensitive environments. By exploring these novel approaches, we seek to enhance the robustness and accuracy of temperature sensors in radiation-intensive settings, enabling reliable data collection and facilitating successful operations in challenging radiation-rich conditions. The comparative analysis of these configurations will shed light on their performance and effectiveness in mitigating radiation-induced effects, thereby contributing to the advancement of radiation-resistant temperature sensing technologies.

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“…In a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) integrated circuit, electron-hole pairs are generated in the oxides and insulators due to ionizing radiation [13]. This effect could lead to the degradation and failure of the device [15], but it is also feasible to use it to determine the radiation dose through the TID measurement. In these circuits, some short-term single-event effects, called Single Event Effects, or SEEs, occur, which are present for a short time interval, causing momentary changes in device properties.…”

Section: Introductionmentioning

confidence: 99%

Temperature compensated low voltage MOSFET radiation sensor: proof of concept and a case study

Petrashin

Lancioni

Toledo

et al. 2020

JAREE

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This paper presents a proof of concept performed on a new and very simple CMOS circuit configuration that implements a radiation dosimeter based on the threshold voltage difference (VTH) principle. The circuit used does not use resistors and all the transistors work in strong inversion, their mobility factor being completely canceled by the proposed architecture. Its operation exploits the relationship between radiation and VTH shifting, which allows, through a circuit configuration, to compensate for temperature variation and amplify the reaction to radiation, making it ideal for integrated industrial applications due to its simplicity and good operation. The circuit was designed for operation in areas naturally at risk of radiation, for example nuclear power plants or radiological clinics. Its advantage over other circuits that perform similar functions is mainly its low cost and simplicity of design.

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Spice modeling of ionizing radiation effects in CMOS devices

Cited by 3 publications

References 31 publications

The evolution of breakdown voltage and delay time under high overvoltage for different types of surge arresters

The evolution of breakdown voltage and delay time under high overvoltage for different types of surge arresters

Reliable Temperature Measurement in Radiation-Intensive Environments

Temperature compensated low voltage MOSFET radiation sensor: proof of concept and a case study

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