Spice modelling of a tri‐state memristor and analysis of its series and parallel characteristics

Abstract

Memristors are passive non-linear circuit components with memory characteristics, and have been recognized as the fourth basic circuit component, along with resistors, capacitors, and inductors. It has been nearly half a century since the conceptualisation of the memristor, and related research has mainly focussed on the two aspects of binary and continuous memristors. However, compared with these two types of memristors, tri-state and multi-state memristors have greater data density per device, with rich dynamics and great potential in logic and chaotic circuit applications. Moreover, previous studies show that the series-parallel connection of memristor generates more diverse circuit behaviours and increased capacity over a single memristor. However, most of this research is based on mathematical analysis, and lack behavioural circuit simulations or experimental validation. Here, the tri-state memristor is proposed and the mathematic and equivalent Spice models of the tri-state memristor is shown. Furthermore, the circuit characteristics are studied with a complete characterisation of its series-parallel behaviours of the tri-state memristor. Simulations are performed with LTSpice, and the results verify the theoretical analysis, which provides a strong experimental basis for the study of combinational memristive circuits.This is an open access article under the terms of the Creative Commons Attribution-NonCommercial-NoDerivs License, which permits use and distribution in any medium, provided the original work is properly cited, the use is non-commercial and no modifications or adaptations are made.

Ternary combinational logic gate design based on tri-valued memristors

“…The model parameters can be modified according to the actual application requirements [18]. In [19], an implementation method of connecting two tri-valued memristors in series and parallel to obtain a multi-valued memristor was proposed. As a result, a voltage-controlled tri-valued memristor model is obtained in this paper by connecting two voltage-controlled binary memristors in parallel, and the resulting tri-valued memristor model is used to design ternary combinational logic circuits.…”

Design of the Threshold-Controllable Memristor Emulator Based on NDR Characteristics

“…Its proven good performance implies significant potential in the fields of chaotic circuits [3][4][5], nonvolatile memory [6,7], digital logic [8,9], artificial neural networks [10][11][12], and non-linear circuits. In general, the research of memristors includes physical implementation [2,13,14], applications in electronic circuits [15,16], and memristor emulators [17][18][19][20][21][22][23][24][25][26].…”