SPICE simulation of memristive circuits based on memdiodes with sigmoidal threshold functions

Patterson, G. A.; Suñé, J.; Miranda, E.

doi:10.1002/cta.2419

Cited by 7 publications

(8 citation statements)

References 28 publications

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“…This model belongs to the class of models with voltage thresholds V ON and V OFF . Like the similar mem-diode model [ 37 ] (whose equations are much more complicated to analyze), the MMS model uses the sigmoid switching function of the internal state variable X . Figure 4 shows the surface corresponding to the function of the right-hand side dX/dt ( X , V ).…”

Section: Resultsmentioning

confidence: 99%

Structural and Parametric Identification of Knowm Memristors

et al. 2021

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This paper proposes a novel identification method for memristive devices using Knowm memristors as an example. The suggested identification method is presented as a generalized process for a wide range of memristive elements. An experimental setup was created to obtain a set of intrinsic I–V curves for Knowm memristors. Using the acquired measurements data and proposed identification technique, we developed a new mathematical model that considers low-current effects and cycle-to-cycle variability. The process of parametric identification for the proposed model is described. The obtained memristor model represents the switching threshold as a function of the state variables vector, making it possible to account for snapforward or snapback effects, frequency properties, and switching variability. Several tools for the visual presentation of the identification results are considered, and some limitations of the proposed model are discussed.

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Section: Resultsmentioning

confidence: 99%

Structural and Parametric Identification of Knowm Memristors

et al. 2021

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“…The development of circuits and systems based on RS devices requires compact RS device model running in SPICE‐like simulation environment . These compact models rely on conceptual simplifications (e.g., the idea of a conductive filament with a given shape, e.g., cylindrical or conical) and physical assumptions inferred from empirical measurements . A variety of semi‐empirical models have been proposed, which assume that the CF/s in RS devices behaves as: i) an ohmic conductor, ii) an hourglass‐shaped quantum‐point contact, iii) a space‐charge region, iv) a semi‐conductive region that may create a Schottky junction with the electrodes, v) a highly defective region in the dielectric in which either hopping conduction or delocalized transport may occur.…”

Section: Simulation Of Rs: From Materials To Devices and Systemsmentioning

confidence: 99%

Recommended Methods to Study Resistive Switching Devices

Lanza

Wong

Pop

et al. 2018

Adv Elect Materials

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525

434

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Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.

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“…Circuitry models are characterized by low computational complexity and usually include a certain set of fitting parameters that make it possible to sufficiently accurately fit the simulation results to specific experimental characteristics of memristive elements. These models can be integrated into SPICE-applications of modern computer-aided design (CAD) systems, supplementing their libraries of elements and expanding the functionality [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

“…Numerous studies have been devoted to the development of compact models of memristive elements [18][19][20][21][22][23][24]. Usually, depending on the purpose of the study, the proposed models are designed either to simulate bipolar switching processes, or to consider multilevel tuning of the conductivity of resistive memory elements.…”

Section: Introductionmentioning

confidence: 99%

Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors

2022

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The article presents the results of the development and study of a combined circuitry (compact) model of thin metal oxide films based memristive elements, which makes it possible to simulate both bipolar switching processes and multilevel tuning of the memristor conductivity taking into account the statistical variability of parameters for both device-to-device and cycle-to-cycle switching. The equivalent circuit of the memristive element and the equation system of the proposed model are considered. The software implementation of the model in the MATLAB has been made. The results of modeling static current-voltage characteristics and transient processes during bipolar switching and multilevel turning of the conductivity of memristive elements are obtained. A good agreement between the simulation results and the measured current-voltage characteristics of memristors based on TiOx films (30 nm) and bilayer TiO2/Al2O3 structures (60 nm/5 nm) is demonstrated.

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SPICE simulation of memristive circuits based on memdiodes with sigmoidal threshold functions

Cited by 7 publications

References 28 publications

Structural and Parametric Identification of Knowm Memristors

Structural and Parametric Identification of Knowm Memristors

Recommended Methods to Study Resistive Switching Devices

Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors

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