SPICE-simulation of nonlinear effects in field-effect-transistors caused by thermal power feedback

Schurack, E.; Latzel, T.; Gottwald, A.

doi:10.1109/iscas.1993.393931

Cited by 7 publications

(2 citation statements)

References 4 publications

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“…Unfortunately, many papers are devoted to electrothermal models of separated semiconductor devices only. For example, in the papers [23–28], [29–32], and , electrothermal models of the diode, electrothermal models of power bipolar junction transistor, and electrothermal models of power metal oxide semiconductor field effect transistor (MOSFET) are described, respectively. In previous years, some electrothermal models of integrated circuits used in switching‐mode power supplies were published, for example, in .…”

Section: Introductionmentioning

confidence: 99%

Electrothermal model of monolithic TOPSwitch regulators

Górecki

2013

Int J Numerical Modelling

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In the paper, an electrothermal compact model of monolithic switching-mode voltage regulators belonging to the TOPSwitch family is proposed. The description of this model and some results of the experimental verification of its correctness on the example of the regulator TOP222Y are presented. The proposed model can be used to calculate the terminal voltages and currents of the investigated device and the internal temperature of this regulator, too. The satisfying agreement between the calculated and measured characteristics of the switching-mode power supply including the considered integrated circuit was reached.

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Section: Introductionmentioning

confidence: 99%

Electrothermal model of monolithic TOPSwitch regulators

Górecki

2013

Int J Numerical Modelling

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“…It results from the conversion of the electrical energy into heat and leading, in the real cooling conditions, to the device inner temperature rise above the ambient one. The power MOS transistor characteristics determined under self-heating conditions, named as the nonisothermal characteristics, can differ from the isothermal characteristics corresponding to the ideal cooling conditions [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

The compact d.c. electrothermal model of power MOSFETs for SPICE

Zarębski

2009

Int J Numerical Modelling

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SUMMARYThis paper concerns the problem of modelling of power MOS transistors in SPICE. In the paper the new form of the electrothermal d.c. model (ETM) of the considered class of power devices is proposed. The ETM is based on the modified Shichman-Hodges model, in which the generation current, the breakdown voltage, the sub-threshold region, the thermally dependent series resistances and self-heating are included. The device inner temperature calculated from the thermal model is the sum of the ambient temperature and the product of the electrical power dissipated inside the device and its thermal resistance. The presented model has been verified experimentally. The results of calculations and measurements of MTD15N06V (ON Semiconductor) and IRF840 (International Rectifier) transistors are given as well.

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