Spin accumulation from nonequilibrium first principles methods

Fabian, Alexander; Czerner, Michael; Heiliger, Christian; Rossignol, Hugo; Wu, Ming-Hung; Gradhand, Martin

doi:10.1103/physrevb.104.054402

Cited by 9 publications

(17 citation statements)

References 57 publications

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“…Furthermore, it is important to mention that in Cu the dominant contributions are almost symmetric with respect to the inversion center of the thin film, whereas for Pt a strong antisymmetric component can be identified. In agreement with previous work [24], the induced accumulation in the isotropic relaxation-time approximation is perfectly antisymmetric, resulting in dominant contributions at the surfaces.…”

Section: Resultssupporting

confidence: 91%

“…in order to quantify the bare contributions to the spin accumulation arising from the scattering-in term. Third, addressing contributions from the clean system only, the isotropic relaxation time τ can be used to define [24] χ…”

Section: Computational Methods and Detailsmentioning

confidence: 99%

“…Thus besides the spin accumulation from the intrinsic SOC such as the Rashba-Edelstein effect and the intrinsic SHE [6,[15][16][17], the extrinsic effects originating from spindependent scattering at disorder potentials simultaneously play a critical role in the physics of spin accumulation. While from experiments it is evident that impurities and disorder at the interfaces play an important role [18][19][20], their effect on the spin accumulation has not been addressed explicitly in theoretical descriptions [21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

“…In Sec. II, we briefly introduce the computational framework and various approximations for the description of the transport properties which are all based on the semiclassical Boltzmann equation [23,24,26,33] either including or ignoring the scattering-in term (vertex corrections). The structural details of the thin films will be discussed in detail.…”

Section: Introductionmentioning

confidence: 99%

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Spin accumulation in metallic thin films induced by electronic impurity scattering

Fabian

Gradhand

2021

Phys. Rev. B

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To explore spin accumulation, evaluating the spin galvanic and spin Hall effects, we utilize the semiclassical Boltzmann equation based on input from the relativistic Korringa-Kohn-Rostoker Green's function method within the density functional theory. We calculate the spin accumulation including multiple contributions, especially skew-scattering (scattering-in term), and we compare this to three different approximations, which include the isotropic and anisotropic relaxation-time approximation. For heavy metals, with strong intrinsic spin-orbit coupling, we find that almost all the effects are captured within the anisotropic relaxation-time approximation. On the other hand, in light metals the contributions from the vertex corrections (scattering-in term) are comparable to the induced effect in the anisotropic relaxation-time approximation. We focus in particular on the influence of the atomic character of the substitutional impurities on the spin accumulation, as well as the dependence on the impurity position. As impurities will break the space inversion symmetry of the thin film, this will give rise to both symmetric and antisymmetric contributions to the spin accumulation. In general, we find that the impurities at the surface generate the largest efficiency of charge-to-spin conversion in the case of spin accumulation. Comparing our results to existing experimental findings for Pt, we find good agreement.

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Section: Resultssupporting

confidence: 91%

Section: Computational Methods and Detailsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Spin accumulation in metallic thin films induced by electronic impurity scattering

Fabian

Gradhand

2021

Phys. Rev. B

Self Cite

View full text Add to dashboard Cite

show abstract

“…Thus besides the spin accumulation from the intrinsic SOC such as the Rashba-Edelstein effect and intrinsic SHE [6,[15][16][17], the extrinsic effects originating from spin-dependent scattering at disorder potentials simultaneously play a critical role in the physics of spin accumulation. While from experiments it is evident that impurities and disorder at the interfaces play an important role [18][19][20] their effect on the spin accumulation has not been addressed explicitly in theoretical descriptions [21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%