Hydrogenated silsesquioxane (HSQ) is a key inorganic
electron beam
resist, celebrated for its sub-10 nm resolution and etching resistance,
but it faces challenges with stability and sensitivity. Our innovative
study has comprehensively assessed the lithographic performance of
three functionalized polysilsesquioxane (PSQ) resist seriesolefins,
halogenated alkanes, and alkanesunder electron beam lithography
(EBL). We discovered that the addition of olefin groups, such as in
the HMP-30 formulation with 30% propyl acrylate, remarkably increased
the sensitivity to 0.6 μC/cm2. The inclusion of halogenated
aromatic and hydrogen-substituted methyl groups further enhanced sensitivity
and contrast, with HClBN-50 achieving a 22.9 nm resolution pattern.
At the same time, the storage of PSQ resists was significantly improved
compared to commercial HSQ with increasing alkane group content. Crucially,
our research has unveiled the lithography reaction mechanism, highlighting
how group encapsulation and steric hindrance influence PSQ performance.
This insight is groundbreaking, offering a deeper understanding of
the molecular structure-performance relationship and laying the groundwork
for developing next-generation electron beam resists with superior
sensitivity, resolution, and contrast for microelectronics manufacturing.