plane uniaxial magnetic anisotropy with a well-defined easy axis along <001> and a peak-topeak ferromagnetic resonance linewidth of 7.5 Oe at 9.32 GHz, similar to YIG epitaxilly grown on GGG. Both spin Hall magnetoresistance and longitudinal spin Seebeck effects in the inverted bilayers indicate excellent Pt/YIG interface quality.
2Magnetic garnets are important materials that offer unique functionalities in a range of bulk and thin film device applications requiring magnetic insulators. 1,2 Among all magnetic insulators, yttrium iron garnet (Y 3 Fe 5 O 12 or YIG) has been most extensively used in various high-frequency devices such as microwave filters, oscillators, and Faraday rotators 3 due to its attractive attributes including ultra-low intrinsic Gilbert damping constant ( as low as 3 10 -5 ) 4 which is two orders of magnitude smaller than that of ferromagnetic metals, high Curie temperature (T C = 550 K), soft magnetization behavior, large band gap (~ 2.85 eV), 5 and relatively easy synthesis in single crystal form. These conventional applications demand bulk YIG crystals or micron-thick films grown by liquid phase epitaxy. 6 For more recent spintronic studies such as the spin Seebeck effect (SSE) 7 and spin pumping, 8 submicron-or nanometer-thick films are typically grown by pulsed laser deposition (PLD) or sputtering. It has been shown that high-quality YIG films can be epitaxially grown directly on GGG substrates due to the same crystalline structure and a very small lattice mismatch of 0.057%. [9][10][11] To form bilayers, a thin polycrystalline metal layer is typically deposited on top of YIG by sputtering, which results in reasonably good interfaces for spin current transport. 7,8,12 For some studies such as the magnon-mediated current drag, 13,14 sandwiches of metal/YIG/metal are required, in which YIG needs to be both magnetic and electrically insulating. However, high-quality bilayers of the reverse order, i.e. YIG on metal, are very difficult to be fabricated. A main challenge is that the YIG growth requires high temperatures and an oxygen environment 15 which can cause significant inter-diffusion, oxidation of the metal layer, etc. and consequently lead to poor structural and electrical properties in both metal and YIG layers.This letter reports controlled growth of high-quality single crystal YIG thin films ranging from 30 to 80 nm in thickness on a 5 nm thick Pt layer atop Gd 3 Ga 5 O 12 or GGG (110) substrate. Combined with low-temperature growth which suppresses the inter-diffusion, 3 subsequent rapid thermal annealing (RTA) and optimization of other growth parameters result in well-defined magnetism, atomically sharp Pt/YIG interface, and atomically flat YIG surface. In addition, despite the intermediate Pt layer that has a drastically different crystal structure from the garnets, the top YIG layer shows desired structural and magnetic properties as if it were epitaxially grown on GGG (110).5 5 mm 2 of commercial GGG (110) single crystal substrates are first cleaned in ultrasonic baths...