Spin-dependent electron transport through a magnetic resonant tunneling diode

Havu, P.; Tuomisto, Noora; Väänänen, R.; Puska, Martti J.; Nieminen, Risto M.

doi:10.1103/physrevb.71.235301

Cited by 26 publications

(7 citation statements)

References 26 publications

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“…The electrical demonstration of the well splitting constitutes a first important step for realizing a voltage controlled spin switching device, which works by selectively bringing either the spin-up or down level into resonance. Such a device operation was also theoretically investigated (Havu et al, 2005) simulating the experimental setup of Ref. (Slobodskyy et al, 2003) and comparing the numerical results obtained from both the Wigner and Greens function approach.…”

Section: C3 Paramagnetic Spin-rtdsmentioning

confidence: 99%

Semiconductor spintronics

Fabian¹,

Matos-Abiague²,

Ertler³

et al. 2007

Acta Physica Slovaca. Reviews and Tutorials

921

1,204

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Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. While metal spintronics has already found its niche in the computer industry-giant magnetoresistance systems are used as hard disk read heads-semiconductor spintronics is yet to demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor materials, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field. 72.25.Rb, 75.50.Pp, PACS

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Section: C3 Paramagnetic Spin-rtdsmentioning

confidence: 99%

Semiconductor spintronics

Fabian¹,

Matos-Abiague²,

Ertler³

et al. 2007

Acta Physica Slovaca. Reviews and Tutorials

921

1,204

View full text Add to dashboard Cite

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“…14 It is necessary to point out that the effects of the width of the paramagnetic layer on the spin-dependent current densities in such a magnetic RTD have been studied and the oscillatory behaviors in the current-voltage characteristics reported. 11 Now, for further understanding of the quantum size effects of the system on the spin-tunneling times, we calculate the degree of spin polarization of the tunneling electrons, which can be defined as P = ͑ ↑ − ↓ ͒ / ͑ ↑ + ↓ ͒. The results are plotted in Fig.…”

Section: -3mentioning

confidence: 99%

“…6͒ and ZnSe. 7 The ͑Zn,Mn͒Sebased RTD with highly spin-polarized electron current has been suggested by Egues 8 and experimentally demonstrated by Slobodskyy et al 9 Also, different types of magnetic RTDs have been proposed both theoretically [10][11][12][13][14][15][16] and experimentally. [17][18][19][20][21][22] One of the key parameters in operation of magnetic RTDs is the time aspect of tunneling process, which has been the focus of much research in the past decade, because it is an important parameter for better understanding of the spindependent tunneling phenomena in high-speed devices.…”

Section: Introductionmentioning

confidence: 97%

Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode

Saffarzadeh¹,

Daqiq²

2009

Journal of Applied Physics

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We study theoretically the quantum size effects of a magnetic resonant tunneling diode ͑RTD͒ with a ͑Zn,Mn͒Se dilute magnetic semiconductor layer on the spin-tunneling time and the spin polarization of the electrons. The results show that the spin-tunneling times may oscillate and a great difference between the tunneling time of the electrons with opposite spin directions can be obtained depending on the system parameters. We also study the effect of structural asymmetry which is related to the difference in the thickness of the nonmagnetic layers. It is found that the structural asymmetry can greatly affect the traversal time and the spin polarization of the electrons tunneling through the magnetic RTD. The results indicate that, by choosing suitable values for the thickness of the layers, one can design a high-speed and perfect spin-filter diode.

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“…The three combined effects generate an effective modification in the profile associated with the bottom of the conduction band in the heterostructure that finally causes modifications in the electronic transport properties. In the work of Havu et al [ 38 ], the self-consistent spin-density-functional theory method was implemented within the Wigner formalism with Green functions to analyze the properties of electronic transport in a magnetic RTD obtaining the electronic densities and potentials, studying the computational cost that this requires.…”

Section: Introductionmentioning

confidence: 99%

Study of Electronic and Transport Properties in Double-Barrier Resonant Tunneling Systems

et al. 2022

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Resonant tunneling devices are still under study today due to their multiple applications in optoelectronics or logic circuits. In this work, we review an out-of-equilibrium GaAs/AlGaAs double-barrier resonant tunneling diode system, including the effect of donor density and external potentials in a self-consistent way. The calculation method uses the finite-element approach and the Landauer formalism. Quasi-stationary states, transmission probability, current density, cut-off frequency, and conductance are discussed considering variations in the donor density and the width of the central well. For all arrangements, the appearance of negative differential resistance (NDR) is evident, which is a fundamental characteristic of practical applications in devices. Finally, a comparison of the simulation with an experimental double-barrier system based on InGaAs with AlAs barriers reported in the literature has been obtained, evidencing the position and magnitude of the resonance peak in the current correctly.

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Spin-dependent electron transport through a magnetic resonant tunneling diode

Cited by 26 publications

References 26 publications

Semiconductor spintronics

Semiconductor spintronics

Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode

Study of Electronic and Transport Properties in Double-Barrier Resonant Tunneling Systems

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