source in quantum optics, magnetic memory devices, and high-definition imaging. [4][5][6][7] For those CPL-based devices it is necessary to distinguish between two polarization states of CPL, that is, to establish sensitive CPL detectors. Different from the indirect method of detecting CPL, chiral material can enable direct CPL detectors without the assistance of optical elements, meeting the demands for integrated and flexible devices.One of the grand challenges for direct CPL detectors is seeking suitable chiral materials with excellent semiconductor properties and strong chiroptical activity. [8] In this regard, chiral hybrid organic-inorganic perovskites (HOIPs) are especially promising. [9] They are typically formed with nanometer-thick inorganic [PbX 6 ] 4− (X = Cl, Br, I) octahedral framework and separated one from another by barriers of chiral organic ligands. [10][11][12] This structural feature can induce chirality into inorganic sublattice band edge states, allowing efficient charge transport and at the same time, chiroptical activity of these hybrid materials. [13][14][15][16][17] So far, prominent CPL photodetectors based on chiral HOIPs have been achieved (e.g., [(R)-NEA]PbI 3 , [(R)-MPA] 2 MAPb 2 I 7 , [(R)-/(S)-MBA]PbI 4 , and [(R)-/(S)-PEA]PbI 3 ), fully revealing their promise in this field. [18][19][20][21][22] Despite such an advance, however, those presented devices are characterized only at wavelengths in visible bands and typically achieve anisotropy factor of less than 0.2. Sensitive chiral HOIP detectors that target
Chiral hybrid organic-inorganic perovskites (HOIPs) have been well developed for circularly polarized light (CPL) detection, while new members that target at solar-blind ultraviolet (UV) region remain completely unexplored.Here, an effective design strategy to demonstrate circular polarization-sensitive solar-blind UV photodetection by growing wide-bandgap chiral HOIP [(R)-MPA] 2 PbCl 4 ((R)-MPA = methylphenethylammonium) single crystals onto silicon wafers, with well-defined heterostructures, is reported. The solid mechanical and electrical connection between the chiral HOIP and silicon wafer results in strong built-in electric field at heterojunction, providing a desirable driving force for separating/transporting carriers generated under CPL excitation at 266 nm. Unexpectedly, during such a transport process, not only the chirality of HOIP crystal is transferred to the heterostructure, but also the circular polarization sensitivity is significantly amplified. Consequently, anisotropy factor of the resultant detectors can reach up to 0.4 at zero bias, which is much higher than that of the pristine single-phase chiral HOIP (≈0.1), reaching the highest among the reported CPL-UV photodetectors. As far as we know, the integration of chiral HOIP crystals with silicon technology is unprecedent, which paves a way for designing boosted-performance CPL detectors in solar-blind UV region as well as for other advanced optoelectronic devices.