2010
DOI: 10.1016/j.ssc.2009.10.040
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Spin-dependent tunneling characteristics in Fe/MgO/Fe trilayers: First-principles calculations

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Cited by 22 publications
(6 citation statements)
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“…Such applications are essentially based on the large tunneling magnetoresistance (TMR) effect in Fe/MgO multilayer systems. A substantial fraction of previous research is therefore devoted to the electronic transport characteristics of Fe/MgO/Fe(001) trilayer tunnel junctions [7][8][9][10][11][12][13][14][15][16][17] . One major outcome in the importance of these studies is the relevance of resonant interface states for the spin-dependent transport 7 .…”
Section: Introductionmentioning
confidence: 99%
“…Such applications are essentially based on the large tunneling magnetoresistance (TMR) effect in Fe/MgO multilayer systems. A substantial fraction of previous research is therefore devoted to the electronic transport characteristics of Fe/MgO/Fe(001) trilayer tunnel junctions [7][8][9][10][11][12][13][14][15][16][17] . One major outcome in the importance of these studies is the relevance of resonant interface states for the spin-dependent transport 7 .…”
Section: Introductionmentioning
confidence: 99%
“…In the present work, we will concentrate on a system consisting of a metallic part and a wide band-gap semiconductor or insulator. We have selected the paradigmatic system Fe/MgO(001), for which the electronic and transport properties have been intensively studied in the past [34][35][36][37][38][39][40][41][42][43][44] due to its relevance for spintronics applications as a tunneling magnetoresistive element in hard disk read heads 45,46 or spin diode or rectifier for magnetic logic elements. 47 The choice of the system was also motivated by recent optical-pump, Xray-probe experiments, where the optical pump pulse was designed to excite the metallic subsystem, only.…”
Section: Introductionmentioning
confidence: 99%
“…Understanding the interaction of laser pulses with a heterostructure offers the possibility to induce selectively excitations in a particular layer which may propagate into the entire system. At the interface between metallic and insulating layers, the electronic structure is characterized by the hybridization between orbitals of the metallic and insulating part, which usually leads to localized states within the gap in the adjacent layer of the insulator [36,[39][40][41]. As we will show, these interface states might be employed by a proper choice of the photon energy to foster a simultaneous, concerted excitation of electrons and holes.…”
Section: Introductionmentioning
confidence: 85%
“…Fe/MgO(001) represents the ideal model system to explore such effects. The Fe/MgO system was extensively investigated in the context of TMR (tunnel mag- netoresistance) and benefits from the fact that electronic, magnetic and transport properties are well established [40,41,[43][44][45][46][47][48][49][50]. Recently, also optical and lattice excitations have been subject to theoretical and experimental studies [36,42,51,52].…”
Section: Introductionmentioning
confidence: 99%