Spin-dependent tunneling time in periodic diluted-magnetic-semiconductor/nonmagnetic-barrier superlattices

Yang, Ping-Fan; Guo, Yong

doi:10.1063/1.4941302

Cited by 7 publications

(4 citation statements)

References 37 publications

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“…Recently, there is another degree of freedom in some materials, the valley degree of freedom, which can be utilized to process and carry information, and this research field is called valleytronics [20]- [23]. Many literatures in this field emphasis the ability of superlattice structures to successfully control the transport properties of graphene [24], [25], silicene [26], [27] and semiconductors [28], [29].…”

Section: Introductionmentioning

confidence: 99%

Ferromagnetic Silicene Superlattice Based Thermoelectric Flexible Renewable Energy Generator Device

2021

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The object of the current research manuscript is to analyze the valley-spin thermoelectric properties and Nernst coefficient at two different temperatures for ferromagnetic silicene superlattice. Photon-assisted tunneling probability is used to identify the resolved thermoelectric parameters including (valley, spin, and charge) electronic thermal conductance, Seebeck coefficient, figure of merit, and also electrical conductance and Nernst coefficient. The results show oscillatory behavior to all investigated parameters. The improved data of Seebeck coefficient (valley, spin, and charge) could be because of quantum confinement effect of the present investigated nanodevice. The figure of merit (valley, spin, and charge) attains quite high values with good high thermoelectric efficiency. The enhancement of Nernst coefficient (valley, spin, and charge) might consider Nernst effect is suitable for thermoelectric heat energy conversion system of the present flexible ferromagnetic silicene superlattice. The ferromagnetic silicene superlattice nanodevices are good candidates for flexible renewable energy generation as demonstrated by this analysis.

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Section: Introductionmentioning

confidence: 99%

Ferromagnetic Silicene Superlattice Based Thermoelectric Flexible Renewable Energy Generator Device

2021

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“…Based on the concept that spin up and spin down electrons feel different potentials in a DMS, controlling the localization of spin states is possible in the quantum dot which will be useful for spin‐based memories. Moreover, a spin‐polarized current can be obtained by a DMS tunnel junction . A DMS can act as a spin filter that allows either spin up or spin down electrons to pass through the barrier.…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, a spin-polarized current can be obtained by a DMS tunnel junction. [23][24][25] A DMS can act as a spin filter that allows either spin up or spin down electrons to pass through the barrier. The benefit of using the DMS barrier is that its height can be tuned by an external magnetic field.…”

Section: Introductionmentioning

confidence: 99%

Coaxial Quantum Well Wires in Magnetic/Nonmagnetic Heterostructures

Sangtawee

Srikom

Amthong

2018

Physica Status Solidi (b)

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We propose a coaxial cylindrical quantum well wire which is composed of layers of a dilute magnetic semiconductor (DMS) and a nonmagnetic semiconductor (NMS). Using effective mass approximation, we present a numerical calculation of the eigenenergies and eigenstates of electrons in the heterostructure. The variation of the spin‐dependent energy levels is influenced by the giant Zeeman splitting and potential energies due to a vector potential for sufficiently low and high magnetic fields, respectively. It is found that crossing and anticrossing behaviors of energy levels can be controlled by the thickness of a NMS layer. The ballistic transport of the structure is also investigated. The ranges of the Fermi energy for obtaining full spin polarization are suggested in this work.

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“…It is well known that the superlattice structures are very successful in controlling the transport properties of semiconductors 31 32 33 34 and graphene 35 36 37 38 39 40 41 . Presently the graphene superlattices have been realized in the experiments 42 43 , while relatively little work has been carried out on the spin and valley transport in silicene superlattice 44 45 .…”

mentioning

confidence: 99%

Electrically controllable sudden reversals in spin and valley polarization in silicene

Zhang

Chan

2016

Sci Rep

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We study the spin and valley dependent transport in a silicene superlattice under the influence of a magnetic exchange field, a perpendicular electric field and a voltage potential. It is found that a gate-voltage-controllable fully spin and valley polarized current can be obtained in the proposed device, and the spin and valley polarizations are sensitive oscillatory functions of the voltage potential. In properly designed superlattice structure, the spin and valley polarizations can be reversed from −100% to 100% by a slight change in the external voltage potential. The energy dispersion relations of the superlattice structure are also investigated, which helps us to understand the effects of the superlattice structure. The switching of the spin direction and the valley of the tunneling electrons by a gate voltage enables new possibilities for spin or valley control in silicene-based spintronics and valleytronics.

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Spin-dependent tunneling time in periodic diluted-magnetic-semiconductor/nonmagnetic-barrier superlattices

Cited by 7 publications

References 37 publications

Ferromagnetic Silicene Superlattice Based Thermoelectric Flexible Renewable Energy Generator Device

Ferromagnetic Silicene Superlattice Based Thermoelectric Flexible Renewable Energy Generator Device

Coaxial Quantum Well Wires in Magnetic/Nonmagnetic Heterostructures

Electrically controllable sudden reversals in spin and valley polarization in silicene

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