2013
DOI: 10.1002/pssb.201350024
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Spin disorder scattering in a ferromagnetic insulator-on-graphene structure

Abstract: We theoretically study the transport properties of a single graphene layer between two insulating materials, i.e., a ferromagnetic EuO thin film and a nonmagnetic SiC substrate. An exchange interaction between the charge carrier spins in graphene and the localized magnetic moments in the ferromagnetic insulator is assumed. This proximity effect and the large spin fluctuations at temperatures close to the ferromagnetic transition temperature TC lead to spin disorder scattering, which is calculated using a Green… Show more

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