The isothermal magnetic entropy changes (S M 's) are studied in Ni 80 Fe 20 /Ni 67 Cu 33 /Co 90 Cu 10 /Mn 80 Ir 20 stacks at temperatures (T) near the Curie point (T c ) of the Ni 67 Cu 33 spacer by applying magnetic fields (H) in a few tens of Oersted. Such low values of H were sufficient for toggling magnetic moments in the soft ferromagnetic (FM) layer (Ni 80 Fe 20 ). It is found out that this switching provides the value of S M , which is up to 20 times larger than that achievable in a single Ni 67 Cu 33 film subjected to such low H. Our finding holds promise to be utilized in the magnetocaloric devices that would be based on FM/PM/FM heterostructures and would operate with moderate H.Introduction. In materials that exhibit a strong magnetocaloric effect (MCE), the maximal magnetocaloric efficiency is basically achievable in the vicinity of phase magnetic transitions, e.g., near T c [1, 2]. The MCE, observed currently in record magnetocaloric materials, is believed to be sufficient for cooling down (or heating up) the material by applying H up to several tens of kilo-oersted over several tens of thermodynamic cycles [3][4][5][6]. However, such strong fields can only be produced with bulky magnets, which are undesired to be employed in magnetic refrigeration [7]. Therefore, there is a task to seek for MCE materials, in their both bulk and thin-film forms [8][9][10], that could be used for magnetic cooling with moderate fields. We propose to enhance the MCE by surrounding a magnetocaloric material by higher-T c FM's, [11,12] so that their reconfigurations in moderate H could provide magnetizing/demagnetizing the PM spacer due to the effect of proximity [13]. It has been shown [12, 14-17] that FM layers surrounding the PM (or weakly FM) spacer strongly affect its magnetization up to the spacer thickness of 20 nm [12].Here we report on our measurements of S M in Ni 80 Fe 20 /Ni 67 Cu 33 /Co 90 Cu 10 /Mn 80 Ir 20 stacks at T close to T c of the Ni 67 Cu 33 spacer between the FM layers, i.e., Ni 80 Fe 20 and Co 90 Fe 10 . Such a heterostructure system exhibits reconfigurations of the mutual orientation of FM magnetizations, M 1 and M 2 , under applying a field of H sw 20 Oe due to their exchange decoupling across the spacer above its T c [14][15][16][17]. Our evaluations of the MCE in FM/PM/FM structures anticipate a very high MCE, dT/dH2.0 K/kOe in bias fields of only a few tens of oersted [11]. This MCE originates from magnetizing/demagnetizing the PM spacer when the mutual orientation of M 1 and M 2 , alters from parallel (antiparallel) to antiparallel (parallel). Such a reconfiguration in a F 1 /PM/F 2 /AF stack, where F 1 =Ni 80 Fe 20 , PM= Ni 67 Cu 33 , F 2 = Co 90 Fe 10 , and AF=Mn 80 Ir 20 is the antiferromagnetic layer, is schematically shown in Fig. 1. The role of the AF layer is to render the layer F 2 magnetically hard, which would contrasts to the magnetically soft layer F 1 . The dependence of S M on the mutual orientation of magnetizations of M 1 and