Spin Dynamics in Narrow-Gap Semiconductor Epitaxial Layers

Litvinenko, K. L.; Nikzad, Lida; Allam, J.; Murdin, B. N.; Pidgeon, C. R.; Harris, J. J.; Cohen, L. F.

doi:10.1007/s10948-007-0237-4

Cited by 11 publications

(11 citation statements)

References 13 publications

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“…Based on our experimental results, we suggest that the different temperature behavior arises from the different residual strain within the samples. Similar phenomena have been observed in some III/V materials [9]. It is also observed that the electron spin relaxation time is dependent on material quality for both (111) and (100) CdTe.…”

Section: Contributedsupporting

confidence: 84%

“…The data shows that within each group of samples T s increases with decreasing FWHM for both (111) and (100) CdTe. Others have proposed that the temperature dependence of T s is reduced by the defect-related structural and electronic environment of localized carriers [9]. However, we believe that the dominant contribution results from the strain rather than the defect density, since the higher structural quality sample B3 (presumably with a lower defect density) exhibits a temperature independent behaviour while the lower structural quality sample A3 exhibits a pronounced temperature dependence.…”

Section: Contributedmentioning

confidence: 71%

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Dependence of electron spin relaxation times on the crystal orientation of CdTe grown on (100)ZnSe/GaAs substrates

Zhang

Liu

et al. 2010

Phys. Status Solidi (c)

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Depending on the shutter sequence used to initiate CdTe deposition, either (100) or (111) CdTe layers can be reproducibly grown on (100) ZnSe/GaAs substrates. Using a hexagonal surface model for (111) CdTe we propose a mechanism for the crystalline orientation selectivity. We use time‐resolved Kerr rotation to monitor the electron spin dynamics in these films. While the spin lifetime is found to depend on material quality, only (100) films show a clear temperature dependence, a peculiar feature we believe to arise from different residual strains in the layers with the two different orientations. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Contributedsupporting

confidence: 84%

Section: Contributedmentioning

confidence: 71%

Dependence of electron spin relaxation times on the crystal orientation of CdTe grown on (100)ZnSe/GaAs substrates

Zhang

Liu

et al. 2010

Phys. Status Solidi (c)

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“…Let us start with the temperature dependence of spin lifetime. Spin lifetime was measured as function of temperature in GaAs [4,371,520,543], GaSb [544], GaN [545][546][547][548], InAs [549][550][551][552], InSb [551,553], InP [554], ZnSe [555], ZnO [556], CdTe [524] and HgCdTe [557,558]. It was found to decrease with increasing temperature at high temperature (nondegenerate regime) in all these works (e.g., see Fig.…”

Section: Electron Spin Relaxation In N-type Bulk Iii-v and Ii-vi Semimentioning

confidence: 89%

“…It was measured in GaAs [543,573], with τ s in the range of 15-110 ps, in InAs [552,574,575], with τ s in the range of 2-24 ps and in InSb [551,553,558], with τ s in the range of 2-300 ps, depending on the doping density.…”

Section: Electron Spin Relaxation In N-type Bulk Iii-v and Ii-vi Semimentioning

confidence: 99%

Spin dynamics in semiconductors

2010

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This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental developments of spin relaxation and dephasing in both spin precession in time domain and spin diffusion and transport in spacial domain. A fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is reviewed comprehensively.Comment: a review article with 193 pages and 1103 references. To be published in Physics Reports

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“…Recent advances in InSb/ InAlSb QW field effect transistors 9 ͑FETs͒ make this system attractive for developing hybrid spintronic technology. Recent studies on spin lifetime in InSb epitaxial layers, as well as in wide InSb QW structures, 10 suggest that InSb could be more attractive over InAs based devices for spintronic applications. 11 Room temperature Schottky barrier transport in InSb/ InAlSb QW FETs has been reported, where results show good agreement with standard thermionic emission ͑TE͒ theory, confirming the presence of a Schottky barrier.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature Schottky barrier tunneling inInSb∕InxAl1−xSbquantum

et al. 2007

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We report low-temperature I͑V͒ measurements taken on small area surface metal contacts to InSb/ InAlSb quantum well material in the temperature range 4.5-100 K. We obtain Schottky barrier J͑V͒ data under reverse bias and analyze the transport observed by using a tunneling model derived from the three-dimensional density of states, showing close correlation for the majority of devices measured. We consider the "Rowell" analysis ͓Tunneling Phenomena in Solids, edited by E. Burnstein and S. Lundqvist ͑Plenum, New York, 1969͒, p. 273͔ of the zero-bias resistance R 0 ͑T͒ and differential conductance G͑V͒ for determining the dominant transport mechanism. Two distinct temperature dependences are observed in the R 0 ͑T͒ data, a weak insulatorlike dependence identifying true single-step tunneling and a strong nonlinear dependence, which we attribute to defect assisted multistep tunneling. Effective barrier parameters are extracted by fitting the G͑V͒ data with a Brinkman-Dynes-Rowell model ͓J. Appl. Phys. 41, 5 ͑1970͔͒ for carrier tunneling.

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Spin Dynamics in Narrow-Gap Semiconductor Epitaxial Layers

Cited by 11 publications

References 13 publications

Dependence of electron spin relaxation times on the crystal orientation of CdTe grown on (100)ZnSe/GaAs substrates

Dependence of electron spin relaxation times on the crystal orientation of CdTe grown on (100)ZnSe/GaAs substrates

Spin dynamics in semiconductors

Low-temperature Schottky barrier tunneling inInSb∕InxAl1−xSbquantum

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