2014
DOI: 10.1103/physrevb.90.245406
|View full text |Cite
|
Sign up to set email alerts
|

Spin dynamics of Mn impurities and their bound acceptors in GaAs

Abstract: We present results of tight-binding spin-dynamics simulations of individual and pairs of substitutional Mn impurities in GaAs. Our approach is based on the mixed quantum-classical scheme for spin dynamics, with coupled equations of motions for the quantum subsystem, representing the host, and the localized spins of magnetic dopants, which are treated classically. In the case of a single Mn impurity, we calculate explicitly the time evolution of the Mn spin and the spins of nearest-neighbors As atoms, where the… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
2
0

Year Published

2014
2014
2022
2022

Publication Types

Select...
4

Relationship

1
3

Authors

Journals

citations
Cited by 4 publications
(2 citation statements)
references
References 41 publications
0
2
0
Order By: Relevance
“…11 of the paper). Calculations carried out on much larger clusters 51 show that show that the qualitative behavior of magnetic anisotropy in Figs. 9 and 11 remains intact as a function of the cluster size, while the value of anisotropy energy saturates to a smaller value without any qualitative change.…”
Section: A Mn Dopants On (110) Gaas Surfacementioning
confidence: 99%
“…11 of the paper). Calculations carried out on much larger clusters 51 show that show that the qualitative behavior of magnetic anisotropy in Figs. 9 and 11 remains intact as a function of the cluster size, while the value of anisotropy energy saturates to a smaller value without any qualitative change.…”
Section: A Mn Dopants On (110) Gaas Surfacementioning
confidence: 99%
“…As compared to our hybrid theory, much larger time steps and much longer propagation times can be achieved. Opposed to ab initio approaches [16,17,26] we therefore consider a simple one-dimensional non-interacting tight-binding model for the conduction-electron degrees of freedom, i.e., electrons are hopping between the nearest-neighboring sites of a lattice. Within this model approach, systems consisting of about 1000 sites can be treated easily, and we can access sufficiently long time scales to study the spin relaxation.…”
mentioning
confidence: 99%