Spin effects in defect reactions

Belyavsky, V. I.; Левин, М. Н.

doi:10.1103/physrevb.70.104101

Cited by 23 publications

(16 citation statements)

References 30 publications

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“…Possible physical mechanisms of interaction of WMF with solids that were analyzed in [12][13][14][15], they is quite reasonable to interpret the experimental results, in particular the model of spin-selective nanoreactor [15] is the most attractive in this case, since changes in the values of internal mechanical stresses have obviously to reflect on changing the microhardness of material under study. One can assume that WMF induced decomposition of metastable impurity-defect complexes leads to rapidly diffusing point defects.…”

Section: Resultsmentioning

confidence: 99%

Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si

Redko¹

2015

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The long-term transformations of photoluminescence of GaN:Si treated with pulsed weak magnetic fields have been studied. The defect structure transformations have been inferred from the radiative recombination spectra within the range 350…650 nm at 300 K. A possible mechanism of observed modifications related with the magnetic field induced destruction of metastable complexes has been discussed.

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Section: Resultsmentioning

confidence: 99%

Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si

Redko¹

2015

Semicond. Phys. Quantum Electron. Optoelectron.

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“…However, the latter effects have already been discussed at the level of their micromechanisms [12][13][14]. The spin nature of the phenomena under consider ation was directly experimentally confirmed after observing the resonant type of the magnetoplastic effect [15] and magnetic memory effects [16][17][18] in the EPR scheme, where magnetic treatment of crys tals was performed in crossed (dc and microwave) fields.…”

Section: Introductionmentioning

confidence: 83%

Change in the microhardness of nonmagnetic crystals after their exposure to the Earth’s magnetic field and AC pump field in the EPR scheme

et al. 2012

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Changes in the microhardness of ZnO, triglycine sulfate (TGS), and potassium acid phthalate (KAP) crystals after their exposure to crossed ultralow magnetic fields, i.e., the Earth's field B Earth ≈ 50 μT and the alternating current field ≈ 3 μT orthogonal to it, have been revealed. In ZnO crystals, the micro hardness increases, whereas in TGS and KAP, it decreases. A maximum change (10-15%) is reached within 1-3 h after magnetic treatment; then, the microhardness gradually recovers to its initial value for the first day. After a sufficient pause, the effect is completely reproduced under the same conditions. The resonant fre quency of the pump field corresponds to the EPR condition with a g factor close to two. The magnetic memory exhibits a strong anisotropy: for each of the crystals, a direction is found, which, being coincident with the Earth's magnetic field vector B Earth , causes complete or partial suppression of the effect. In ZnO and TGS crystals, these are symmetry axes 6 and 2, respectively. In the KAP crystal, it is the direction in the cleav age plane orthogonal the 2 axis. Possible physical mechanisms of the observed phenomena have been dis cussed.

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“…Therefore, traditional approach cannot be used to explain the observed changes of macroscopical characteristics of the materials under study. Alternative mechanisms were proposed in different reports [1][2][3][4], which, however, do not explain all experimental results. In particular, this refers to transformation of the low-frequency region in spectral dependences [5].…”

Section: Introductionmentioning

confidence: 92%

Influence of pulse magnetic fields treatment on optical properties of GaAs based films

Конакова¹

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Long-term transformations of the optical reflectance of GaAs epitaxial structure under weak magnetic field treatment (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) have been obtained. Optical measurements were performed within the wavelength range 800…1100 nm at 300 K. Non-monotonous changes of reflectance were observed. Experimental results have been interpreted in terms of diffusion of point defects, resulting from destruction of metastable complexes (probably [V As +impurity]), from the internal boundaries to the surfaces of the investigated structures. The method for detection of non-equilibrium complexes in multilayer objects has been proposed.

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Spin effects in defect reactions

Cited by 23 publications

References 30 publications

Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si

Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si

Change in the microhardness of nonmagnetic crystals after their exposure to the Earth’s magnetic field and AC pump field in the EPR scheme

Influence of pulse magnetic fields treatment on optical properties of GaAs based films

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