Spin filtering by proximity effects at hybridized interfaces in spin-valves with 2D graphene barriers

Piquemal-Banci, Maëlis; Galceran, Regina; Dubois, Simon; Zatko, Victor; Galbiati, Marta; Godel, Florian; Martin, Marie‐Blandine; Weatherup, Robert S.; Pétroff, F.; Fert, A.; Charlier, Jean‐Christophe; Robertson, John; Hofmann, Stephan; Dlubak, Bruno; Sénéor, Pierre

doi:10.1038/s41467-020-19420-6

Cited by 50 publications

(79 citation statements)

References 47 publications

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“…Graphene, besides being considered as a candidate for traditional electronics [1], has recently found applications in emerging fields such as spintronic devices [2,3], offering long spin lifetimes and long spin propagation lengths [4]. While graphene exhibits negligible intrinsic spin-orbit coupling (SOC), it can be amplified by a proximity effect [5], for example when integrated with a heavier atom [6,7,8].…”

Section: Introductionmentioning

confidence: 99%

Towards Non-Volatile Spin Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks

Lancaster¹,

Arnay²,

Guerrero³

et al. 2021

Preprint

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Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tuneable, non-volatile memories. Here, the atomic layer deposition (ALD) of ferroelectric Hf0.5Zr0.5O2 (HZO) directly on graphene (Gr)/Co/heavy metal (HM) epitaxial stacks is investigated via the implementation of several nucleation methods. With an in-situ method employing an Al2O3 layer, the HZO demonstrates a remanent polarization (2Pr ) of 19.2 µC/cm 2 . An ex-situ, naturally oxidized sputtered Ta layer for nucleation produces a film with 2Pr of 10.81 µC/cm 2 , but a lower coercive field over the stack and switching enduring over subsequent cycles. Magnetic hysteresis measurements taken before and after ALD deposition show strong perpendicular magnetic anisotropy (PMA), with only slight deviations in the magnetic coercive fields due to the HZO deposition process, thus pointing to a good preservation of the single-layer Gr. X-ray diffraction measurements further confirm that the high-quality interfaces demonstrated in the stack remain unperturbed by the ferroelectric deposition and anneal.

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Section: Introductionmentioning

confidence: 99%

Towards Non-Volatile Spin Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks

Lancaster¹,

Arnay²,

Guerrero³

et al. 2021

Preprint

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show abstract

“…Although most C − Fe bonds are not clearly seen as C − C, there is an area of slightly higher density between C 1 and Fe 1 (displayed by the broken circle), which is one of the closest Fe-C pairs. In addition, the average Fe-C binding distance is approximately 2 Å, which is a typical value for chemisorbed metal/Gr interfaces 14,23 . The graphene surface is slightly bumpy on the atomic scale; the vertical position of the C 1 atom is approximately 0.0?…”

Section: Resultsmentioning

confidence: 94%

Density functional study of twisted graphene $L1_0$-FePd heterogeneous interface

Uemoto¹,

Adachi²,

Naganuma³

et al. 2022

Preprint

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We report on the investigation of the atomic-scale structure and electronic properties of graphene(Gr) on the L1 0 -FePd(001) interface using density functional theory. Although such hetero-interfaces have been experimentally synthesized, due to the significant lattice symmetry mismatch between the graphene and tetragonal alloy surface, a theoretical understanding of the optimal configuration of the carbon atoms is required. In this work, we consider various model structures of twisted and non-twisted FePd(001)/Gr interfaces. To evaluate the stability of our models, we analyzed the adsorption energies per carbon atom by performing structural optimizations, including van der Waals interactions. We found that the most stable structure had an adsorption energy of approximately ≈ −0.109 eV/atom (−10.5 kJ/mol), and the energy barrier of the slide was smaller than 0.05 meV/atom. The FePd-graphene distance was approximately 2 Å, which successfully reproduced the experimental value.

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“…We show a device fabrication based on the above studied WS 2 /WSe 2 /WS 2 2D heterostructure with a tailored well-type energetic landscape. We use the Ni(111) substrate as a conductive bottom electrode for our devices . We then carry out a laser lithography step on a spin-coated UVIII resist layer to open small 1 μm 2 windows above the van der Waals heterostructure.…”

Section: Resultsmentioning

confidence: 99%

“…We use the Ni(111) substrate as a conductive bottom electrode for our devices. 72 We then carry out a laser lithography step on a spin-coated UVIII resist layer to open small 1 μm 2 windows above the van der Waals heterostructure. A top Au-capped Co electrode is finally deposited by e-beam evaporation.…”

Section: Resultsmentioning

confidence: 99%

Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructures

et al. 2021

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We present a growth process relying on pulsed laser deposition for the elaboration of complex van der Waals heterostructures on large scales, at a 400 °C CMOS-compatible temperature. Illustratively, we define a multilayer quantum well geometry through successive in situ growths, leading to WSe2 being encapsulated into WS2 layers. The structural constitution of the quantum well geometry is confirmed by Raman spectroscopy combined with transmission electron microscopy. The large-scale high homogeneity of the resulting 2D van der Waals heterostructure is also validated by macro- and microscale Raman mappings. We illustrate the benefit of this integrative in situ approach by showing the structural preservation of even the most fragile 2D layers once encapsulated in a van der Waals heterostructure. Finally, we fabricate a vertical tunneling device based on these large-scale layers and discuss the clear signature of electronic transport controlled by the quantum well configuration with ab initio calculations in support. The flexibility of this direct growth approach, with multilayer stacks being built in a single run, allows for the definition of complex 2D heterostructures barely accessible with usual exfoliation or transfer techniques of 2D materials. Reminiscent of the III–V semiconductors’ successful exploitation, our approach unlocks virtually infinite combinations of large 2D material families in any complex van der Waals heterostructure design.

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Spin filtering by proximity effects at hybridized interfaces in spin-valves with 2D graphene barriers

Cited by 50 publications

References 47 publications

Towards Non-Volatile Spin Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks

Towards Non-Volatile Spin Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks

Density functional study of twisted graphene $L1_0$-FePd heterogeneous interface

Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructures

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