Spin filtering effect, thermal spin diode effect and high tunneling magnetoresistance in the Au/GdI₂/Au van der Waals junction

Abstract

2D van der Waals magnets have been widely concerned in spintronics because of their unique electronic properties, no dangling bonds, and ultra-clean interfaces. However, most of them possess lower Curie...

Cr3X4 (X = Se, Te) monolayers as a new platform to realize robust spin filters, spin diodes and spin valves

“…It is important that this unique spin-polarized band structure is a robust platform for realizing a spin filter and a spin diode. 14,29,30 We then calculated the spindependent transmission spectrum and current under an initial magnetization of parallel configuration (PC) and antiparallel configuration (APC). The calculated transmission spectra of PC and APC devices under zero bias are shown in Fig.…”

A Device Model for Achieving Sizable and Tunable Tunneling Magnetoresistance Using Two‐Dimensional Materials InX (X = O, Se) without Hetero‐Interface

“…Usually, a hetero-interface in an MTJ is inevitable and essential. [7][8][9][10] However, interface disorder in an MTJ is always detrimental to its performance, making it challenging to keep the disorder within a tolerable threshold, especially in MTJs made of 2D materials. Additionally, although a large number of 2D materials have been discovered, the number of magnetic 2D materials remains as yet relatively small.…”

Spin filtering and magnetoresistance effects in a dithiane ultra-short single-molecule insulator

“…Spintronic devices that transfer or process information by manipulating the spin of electrons have attracted wide interest recently. [1][2][3][4][5][6][7][8] Compared with the previously studied conventional electronic devices, spintronic devices can not only realize highspeed operation, but also avoid the heating problem induced by charges. 9 For spintronic devices, the emergence of spinfiltering or magnetoresistance (MR) effects is a prerequisite for their practical applications in future electronic circuits.…”

“…9 For spintronic devices, the emergence of spinfiltering or magnetoresistance (MR) effects is a prerequisite for their practical applications in future electronic circuits. 1,10 In order to achieve these physical effects, a widely adopted strategy is that semiconductor or insulating materials are connected to ferromagnetic electrodes. [11][12][13][14][15][16][17] Scientists initially use three-dimensional (3D) bulk materials as tunneling barriers.…”