Spin-filtering effects of double-barrier magnetic tunnel junctions with an indium phosphide (InP) spacer

Daqiq, Reza

doi:10.1016/j.mseb.2020.114818

Cited by 3 publications

(1 citation statement)

References 45 publications

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“…In tunnel junctions, the random fluctuation of discrete charges can cause shot noise, which can provide unique information that cannot be revealed by current and has attracted people's attention [1,2]. One of the core units of spintronic devices is the magnetic tunnel junction, which has become one of the research hotspots of mesoscopic systems because of its non-volatility, fast running, low power consumption, and high durability [3][4][5][6][7][8]. As an important physical quantity in the study of magnetic tunnel junctions, shot noise has aroused great interest among researchers [9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

The shot noise in quasi-one-dimensional single spin filter magnetic heterojunctions

Lü,

Fang,

Xie

et al. 2024

Phys. Scr.

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Based on the free electronic model and Büttike’s theory on shot noise, we investigated the shot noise of spin electrons in ferromagnetic/non-ferromagnetic insulator/spin filter layer/normal metal (FM/I/SF/NM) quasi-one-dimensional single spin filter tunneling junctions. The calculation results show that the barrier heights and thicknesses of the insulator and spin filter layers strongly affect the values and phases of the Fano factors of spin electrons. Compared with the traditional sandwich structures of ferromagnetic/spin filter layer/normal metal (FM/SF/NM) and ferromagnetic/non-ferromagnetic insulator/normal metal (FM/I/NM), when the thicknesses of the insulator and spin filter layers are very small, in single spin filter magnetic heterojunctions (FM/I/SF/NM), the insulator layer can suppress the Fano factors, while the spin filter layer is easier to separate the Fano factors of electrons whose spin directions are different. Further analysis shows that whether the Rashba coupling in the spin filter layer has an obvious influence on the Fano factors of spin electrons depends on the thickness of the spin filter layer. On the other hand, the Fano factors are strongly dependent on the sizes and directions of the molecular fields of the ferromagnet and spin filter layers. In addition, the electrons are incident with low energy or high energy, and the barrier heights and thicknesses of the spin filter layer and the thicknesses of the insulation layer have a significant effect on the spin-direction-dependent Fano factors of electrons.

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Section: Introductionmentioning

confidence: 99%

The shot noise in quasi-one-dimensional single spin filter magnetic heterojunctions

Lü,

Fang,

Xie

et al. 2024

Phys. Scr.

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Band-pass magnetic tunnel junctions with β-Ga2O3 semiconductors for spin-filtering goals

Ghobadi

Daqiq

Mirebrahimi

2022

Micro and Nanostructures

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Double-barrier magnetic tunnel junctions with enhanced tunnel magnetoresistance

Zheng,

Yang,

Zheng

et al. 2024

Applied Physics Letters

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Tunnel magnetoresistance (TMR) ratio is a key parameter characterizing the performance of a magnetic tunnel junction (MTJ), and a large TMR ratio is essential for the practical application of it. Generally, the traditional solutions to increasing the TMR ratio are to choose different material combinations as the ferromagnetic (FM) leads and nonmagnetic tunnel barrier. In this work, we study an architecture of MTJs of “FM/barrier/FM/barrier/FM” with double barriers, in contrast to the traditional single barrier structure “FM/barrier/FM.” We first analytically show that double barrier MTJ will generally have much higher TMR ratio than the single barrier MTJ and then substantiate it with the well-known example of “Fe/MgO/Fe” MTJ. Based on density functional calculations combined with nonequilibrium Green's function technique for quantum transport study, in the single barrier “Fe/MgO/Fe” MTJ, the TMR ratio is obtained as 122%, while in the double barrier “Fe/MgO/Fe/MgO/Fe” MTJ, it is greatly increased to 802%, suggesting that double barrier design can greatly enhance the TMR and can be taken into consideration in the design of MTJs.

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Spin-filtering effects of double-barrier magnetic tunnel junctions with an indium phosphide (InP) spacer

Cited by 3 publications

References 45 publications

The shot noise in quasi-one-dimensional single spin filter magnetic heterojunctions

The shot noise in quasi-one-dimensional single spin filter magnetic heterojunctions

Band-pass magnetic tunnel junctions with β-Ga2O3 semiconductors for spin-filtering goals

Double-barrier magnetic tunnel junctions with enhanced tunnel magnetoresistance

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