Spin filtering through ferromagnetic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Bi</mml:mi><mml:mi mathvariant="normal">Mn</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>tunnel barriers

Gajek, M.; Bibès, Manuel; Barthélémy, A.; Bouzéhouane, K.; Fusil, S.; Várela, M.; Fontcuberta, J.; Fert, A.

doi:10.1103/physrevb.72.020406

Cited by 204 publications

(145 citation statements)

References 29 publications

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“…The perovskite BiMnO 3 in the bulk is FM with the Curie temperature T CM = 105 K [76,77] and FE with T CE = 450-490 K [78,79]. It can be stabilized in thin-film form in a distorted perovskite structure [80].…”

Section: (D) Thin Filmsmentioning

confidence: 99%

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Multi-ferroic and magnetoelectric materials and interfaces

Velev

Jaswal

Tsymbal

2011

Phil. Trans. R. Soc. A.

208

144

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The existence of multiple ferroic orders in the same material and the coupling between them have been known for decades. However, these phenomena have mostly remained the theoretical domain owing to the fact that in single-phase materials such couplings are rare and weak. This situation has changed dramatically recently for at least two reasons: first, advances in materials fabrication have made it possible to manufacture these materials in structures of lower dimensionality, such as thin films or wires, or in compound structures such as laminates and epitaxial-layered heterostructures. In these designed materials, new degrees of freedom are accessible in which the coupling between ferroic orders can be greatly enhanced. Second, the miniaturization trend in conventional electronics is approaching the limits beyond which the reduction of the electronic element is becoming more and more difficult. One way to continue the current trends in computer power and storage increase, without further size reduction, is to use multi-functional materials that would enable new device capabilities. Here, we review the field of multi-ferroic (MF) and magnetoelectric (ME) materials, putting the emphasis on electronic effects at ME interfaces and MF tunnel junctions.

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Section: (D) Thin Filmsmentioning

confidence: 99%

“…Most MFs have AFM or more complex magnetic ordering. Besides, FM properties of BiMnO 3 appear only at low temperature [80].…”

Section: (B) Multi-ferroic Tunnel Junctionsmentioning

confidence: 99%

Multi-ferroic and magnetoelectric materials and interfaces

Velev

Jaswal

Tsymbal

2011

Phil. Trans. R. Soc. A.

208

144

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“…4) (T c = 69 K), perovskite oxides 5 (BiMnO 3 , T c = 105 K), and, more recently, spinel oxides or ferrites barriers: NiFe 2 O 4 (Ref. 6) (T c = 850 K) and CoFe 2 O 4 (Refs.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth and ferrimagnetic behavior of MnFe2O4(111) ultrathin layers for room-temperature spin filtering

et al. 2011

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We report on the epitaxial growth and physical properties of spinel MnFe 2 O 4 (111) thin films with thicknesses down to 2 nm. The thin films, grown on α-Al 2 O 3 (0001) single crystals or Pt(111) buffer layers by oxygen-assisted molecular beam epitaxy, exhibit high structural order with sharp interfaces and low roughness. The electrical and magnetic properties are carefully investigated and it is shown that MnFe 2 O 4 (111) ultrathin films keep an insulating and ferrimagnetic behavior at room temperature. Special attention is given to the iron/manganese valence state and the cationic ordering. X-ray absorption spectroscopy and magnetic circular dichroism measurements reveal that thin films contain mainly Fe 3+ and Mn 2+ cations, distributed predominantly in a normal spinel structure. This study proves the high potential of MnFe 2 O 4 to be used as a magnetic tunnel barrier for spin filtering applications at room temperature.

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“…12 Optical generation is difficult to integrate with electronic devices. Another method, which also involves ferromagnets, uses a magnetic tunnel junction, [13][14][15][16] with a different tunneling barrier height for each spin direction. The main difficulty is again the impedance match problem between the ferromagnetic junction and the semiconductor at the output.…”

Section: Introductionmentioning

confidence: 99%

Filtering and analyzing mobile qubit information via Rashba–Dresselhaus–Aharonov–Bohm interferometers

et al. 2011

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Spin-1/2 electrons are scattered through one or two diamond-like loops, made of quantum dots connected by one-dimensional wires, and subject to both an Aharonov-Bohm flux and (Rashba and Dresselhaus) spin-orbit interactions. With some symmetry between the two branches of each diamond, and with appropriate tuning of the electric and magnetic fields (or of the diamond shapes) this device completely blocks electrons with one polarization, and allows only electrons with the opposite polarization to be transmitted. The directions of these polarizations are tunable by these fields, and do not depend on the energy of the scattered electrons. For each range of fields one can tune the site and bond energies of the device so that the transmission of the fully polarized electrons is close to unity. Thus, these devices perform as ideal spin filters, and these electrons can be viewed as mobile qubits; the device writes definite quantum information on the spinors of the outgoing electrons. The device can also read the information written on incoming polarized electrons: the charge transmission through the device contains full information on this polarization. The double-diamond device can also act as a realization of the Datta-Das spin field-effect transistor.

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Spin filtering through ferromagneticBiMnO3tunnel barriers

Cited by 204 publications

References 29 publications

Multi-ferroic and magnetoelectric materials and interfaces

Multi-ferroic and magnetoelectric materials and interfaces

Epitaxial growth and ferrimagnetic behavior of MnFe2O4(111) ultrathin layers for room-temperature spin filtering

Filtering and analyzing mobile qubit information via Rashba–Dresselhaus–Aharonov–Bohm interferometers

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