Spin‐flip Raman scattering studies of antimony‐doped ZnSe

Abstract

Spin-flip Raman scattering and photoluminescence studies of ZnSe crystals doped with antimony have provided evidence for the presence of (i) a shallow acceptor level at about 70 meV above the valence band and (ii) a previously unreported deep donor level at about 55 meV below the conduction band, with a gvalue of 1.81. As in ZnSe:N, it is possible that the formation of such deep-donor states may be an inevitable consequence of high concentrations of p-type dopants and the resulting compensation may be one of the reasons why attempts to obtain p-type conductivity continue to be difficult. The deep donor g-value fits well into the sequence of previously reported g-values of 1.11, for shallow donor centres (at about 26 meV), of 1.38 for donors at about 45 meV and of 2.00 for deep donors at 90 meV.