“…In 2018, Zhang et al (2018) proposed the nodal ring spin-gapless semiconducting state in a 2D HK lattice via first-principle calculations. In 2022, Ding et al (2022) summarized almost all the predicted nodal ring/line spin-gapless semiconductors in 2D and 3D materials ( Guan et al, 2013 ; Li and Yang, 2013 ; Ding and Wang, 2015 ; Wang et al, 2016b ; Rasool et al, 2016 ; Wang et al, 2017c ; Liu et al, 2017 ; Deng et al, 2018b ; Wang et al, 2018 ; Huang et al, 2019b ; Wu et al, 2020b ; Guo et al, 2020 ; Li et al, 2021 ; Wang et al, 2021 ; Ji et al, 2022 ; Wu et al, 2022 ) in the past 3 years. Remarkably, they ( Ding et al, 2022 ) also provided three valuable suggestions for the future theoretical design of nodal ring/line spin-gapless semiconductors.…”